Study on the characteristics of Si-doped diamond synthesized by different iron-based catalyst systems under high temperature and pressure

被引:2
|
作者
Liu, Yang [1 ]
Wang, Zhiwen [1 ]
Teng, Yu [1 ]
Li, Bowei [1 ]
Zhao, Hongyu [1 ]
Guo, Qianyu [1 ]
Chen, Liangchao [2 ]
Ma, Hongan [1 ]
Jia, Xiaopeng [1 ]
机构
[1] Jilin Univ, Coll Phys, State Key Lab Superhard Mat, Changchun 130012, Jilin, Peoples R China
[2] Zhengzhou Univ, Sch Phys & Microelect, Key Lab Mat Phys, Minist Educ, Zhengzhou 450052, Henan, Peoples R China
基金
中国国家自然科学基金;
关键词
High-temperature and high-pressure; Silicon doped diamond; Iron-based catalyst; Crystal quality; IB DIAMOND; NITROGEN; GROWTH; CRYSTALS; POWDER;
D O I
10.1016/j.ijrmhm.2023.106488
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This article investigates the effects of different iron based catalysts on the morphology and quality characteristics of diamond single crystals synthesized in high-temperature and high-pressure environments. The results indicated that incorporating silicon impurities led to defects in diamond crystals, increased internal stress in the lattice, and decreased crystal quality. In addition, there are also differences in the synthesis of silicon doped diamonds under different iron based catalyst systems. This manuscript uses optical microscopy, scanning electron microscopy and Raman spectroscopy to characterize diamond crystals, exploring the influence of catalyst differences on the structure of silicon-doped diamonds. At the same time, simulation analysis was conducted on the convective field of the catalyst in the diamond synthesis chamber, and the convective field characteristics of silicon doped diamond growth under different iron based catalysts were established. The simulation results are consistent with the synthesis experimental work. This work provides a new approach to improve the quality of silicon doped diamond single crystals.
引用
收藏
页数:7
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