Self-powered MSM solar-blind AlGaN photodetector realized by in-plane polarization modulation

被引：9
|
作者：
Guo, Chenyu [1 ,2 ]
Zhang, Jiaxin [1 ,2 ]
Xia, Shihong [1 ]
Deng, Liqiong [1 ]
Liu, Kunzi [1 ]
Yang, Zhenhai [1 ]
Cheng, Bin [3 ]
Sarkar, Biplab [4 ]
Guo, Wei [1 ]
Ye, Jichun [1 ]
机构：
[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Engn Res Ctr Energy Optoelect Mat & Devic, Ningbo 315201, Peoples R China
[2] Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R China
[3] Jiangsu Xingang Semicond Inc, Xuzhou 221200, Jiangsu, Peoples R China
[4] Indian Inst Technol Roorkee, Dept Elect & Commun Engn, Roorkee 247667, Uttarakhand, India
来源：
OPTICS LETTERS | 2023年 / 48卷 / 18期
基金：
中国国家自然科学基金;
关键词：
Application fields - In-plane polarization - Metal-semiconductor-metal - Polarization-modulation - Schottky contacts - Self-powered - Solar blind - Symmetric design - UV detection - UV photodetectors;
D O I：
10.1364/OL.500391
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Solid-state self-powered UV detection is strongly required in various application fields to enable long-term operation. However, this requirement is incompatible with conventionally used metal-semiconductor-metal (MSM) UV photodetectors (PDs) due to the symmetric design of Schottky contacts. In this work, a self-powered MSM solar-blind UV PD was realized using a lateral pn junction architecture. A large built-in electric field was obtained in the MSMtype UV-PD without impurity doping, leading to efficiency carrier separation and enhanced photoresponsivity at zero external bias. The solar-blind UV-PD exhibits a cutoff wavelength of 280 nm, a photo/dark current ratio of over 105, and a responsivity of 425.13 mA/W at -10 V. The mechanism of self-powered UV photodetection was further investigated by TCAD simulation of the internal electric field and carrier distributions. (c) 2023 Optica Publishing Group
引用
收藏
页码：4769 / 4772
页数：4
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