Non-monotonic temperature dependence of anomalous Hall effect in a 2D van der Waals ferromagnetic material Fe3GeTe2

被引:2
|
作者
Sharma, Pradeep Raj [1 ,4 ]
Kim, Tae Wan [2 ,3 ]
Noh, Hwayong [1 ]
机构
[1] Sejong Univ, Dept Phys & Astron, Seoul 05006, South Korea
[2] Sejong Univ, Dept Nanotechnol & Adv Mat Engn, Seoul 05006, South Korea
[3] Nanogate Corp, Cheorwon 24062, Gangwon Do, South Korea
[4] Yonsei Univ, Dept Mat Sci & Engn, Seoul 03722, South Korea
基金
新加坡国家研究基金会;
关键词
Fe3GeTe2; Anomalous Hall effect; Ferromagnetism; Antiferromagnetism;
D O I
10.1016/j.matchemphys.2023.127738
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A search for long-range magnetic ordering in two-dimensional materials is recently providing a huge platform for the study of spin-related phenomena. However, the ferromagnetic order of FenGeTe2 (n = 3, 4, 5) still shows ambiguities and needs to be clarified. Here we report the thickness-and temperature-dependent anomalous Hall effects in h-BN/Fe3GeTe2/SiO2 van der Waals heterostructures with the thickness range of 28-175 layers of Fe3GeTe2. The anomalous Hall effects in thinner Fe3GeTe2 flakes show a square-shaped Hall signal with a strong perpendicular magnetic anisotropy, whereas bulk flakes show a gradual switching with the magnetic field due to the presence of multi-or labyrinthine domain structures, consistent with earlier reports. A surprising non-monotonic variation of the anomalous Hall remanence and saturation values with temperatures is observed to indicate a phase transition around 110-125 K, which could be due to a possible formation of an antiferromag-netic state at lower temperatures in Fe3GeTe2. Such an antiferromagnetic transition can be explained in a coupled picture of itinerant electrons and local magnetic moments in relation to the Kondo screening. An additional transition at 150-160 K is also observed in the remanence and the resistance, implying a more complicated mechanism playing a role in the magnetic phases of Fe3GeTe2. A persistence of the anomalous Hall effects observed above the Curie temperature where the remanence disappears further supports the interplay of the itinerant electrons and the local moments.
引用
收藏
页数:6
相关论文
共 50 条
  • [1] Magnetic domain walls of the van der Waals material Fe3GeTe2
    Yang, Hung-Hsiang
    Bansal, Namrata
    Ruessmann, Philipp
    Hoffmann, Markus
    Zhang, Lichuan
    Go, Dongwook
    Li, Qili
    Haghighirad, Amir-Abbas
    Sen, Kaushik
    Blugel, Stefan
    Le Tacon, Matthieu
    Mokrousov, Yuriy
    Wulfhekel, Wulf
    2D MATERIALS, 2022, 9 (02)
  • [2] Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 trilayer heterostructures
    Albarakati, Sultan
    Tan, Cheng
    Chen, Zhong-Jia
    Partridge, James G.
    Zheng, Guolin
    Farrar, Lawrence
    Mayes, Edwin L. H.
    Field, Matthew R.
    Lee, Changgu
    Wang, Yihao
    Xiong, Yiming
    Tian, Mingliang
    Xiang, Feixiang
    Hamilton, Alex R.
    Tretiakov, Oleg A.
    Culcer, Dimitrie
    Zhao, Yu-Jun
    Wang, Lan
    SCIENCE ADVANCES, 2019, 5 (07):
  • [3] Spin-Valve Effect in Fe3GeTe2/MoS2/Fe3GeTe2 van der Waals Heterostructures
    Lin, Hailong
    Yan, Faguang
    Hu, Ce
    Lv, Quanshan
    Zhu, Wenkai
    Wang, Ziao
    Wei, Zhongming
    Chang, Kai
    Wang, Kaiyou
    ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (39) : 43921 - 43926
  • [4] Kinetically Controlled Epitaxial Growth of Fe3GeTe2 van der Waals Ferromagnetic Films
    Zhou, Wenyi
    Bishop, Alexander J.
    Zhu, Menglin
    Lyalin, Igor
    Walko, Robert
    Gupta, Jay A.
    Hwang, Jinwoo
    Kawakami, Roland K.
    ACS APPLIED ELECTRONIC MATERIALS, 2022, 4 (07) : 3190 - 3197
  • [5] Highly Enhanced Curie Temperature in Ga-Implanted Fe3GeTe2 van der Waals Material
    Yang, Mengmeng
    Li, Qian
    Chopdekar, Rajesh, V
    Stan, Camelia
    Cabrini, Stefano
    Choi, Jun Woo
    Wang, Sheng
    Wang, Tianye
    Gao, Nan
    Scholl, Andreas
    Tamura, Nobumichi
    Hwang, Chanyong
    Wang, Feng
    Qiu, Ziqiang
    ADVANCED QUANTUM TECHNOLOGIES, 2020, 3 (04)
  • [6] Temperature and thickness dependent magnetization reversal in 2D layered ferromagnetic material Fe3GeTe2
    Guo, Jun-jie
    Xia, Qing-lin
    Wang, Xi-guang
    Nie, Yao-zhuang
    Xiong, Rui
    Guo, Guang-hua
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2021, 527
  • [7] History-dependent domain and skyrmion formation in 2D van der Waals magnet Fe3GeTe2
    Birch, M. T.
    Powalla, L.
    Wintz, S.
    Hovorka, O.
    Litzius, K.
    Loudon, J. C.
    Turnbull, L. A.
    Nehruji, V.
    Son, K.
    Bubeck, C.
    Rauch, T. G.
    Weigand, M.
    Goering, E.
    Burghard, M.
    Schutz, G.
    NATURE COMMUNICATIONS, 2022, 13 (01)
  • [8] Fe-Intercalation Dominated Ferromagnetism of van der Waals Fe3GeTe2
    Wu, Yueshen
    Hu, Yuxiong
    Wang, Cong
    Zhou, Xiang
    Hou, Xiaofei
    Xia, Wei
    Zhang, Yiwen
    Wang, Jinghui
    Ding, Yifan
    He, Jiadian
    Dong, Peng
    Bao, Song
    Wen, Jinsheng
    Guo, Yanfeng
    Watanabe, Kenji
    Taniguchi, Takashi
    Ji, Wei
    Wang, Zhu-Jun
    Li, Jun
    ADVANCED MATERIALS, 2023, 35 (36)
  • [9] Hard magnetic properties in nanoflake van der Waals Fe3GeTe2
    Tan, Cheng
    Lee, Jinhwan
    Jung, Soon-Gil
    Park, Tuson
    Albarakati, Sultan
    Partridge, James
    Field, Matthew R.
    McCulloch, Dougal G.
    Wang, Lan
    Lee, Changgu
    NATURE COMMUNICATIONS, 2018, 9
  • [10] Voltage tunable sign inversion of magnetoresistance in van der Waals Fe3GeTe2/MoSe2/Fe3GeTe2 tunnel junctions
    Zhu, Shouguo
    Lin, Hailong
    Zhu, Wenkai
    Li, Weihao
    Zhang, Jing
    Wang, Kaiyou
    APPLIED PHYSICS LETTERS, 2024, 124 (22)