High-Performance 8 x 8 4H-SiC-Based MISIM Photodetector Arrays for UV Imaging

We demonstrate the high-performance 8 x 8,4H-SiC-based metal-insulator-semiconductor-insulator-metal (MISIM) ultraviolet (UV) photodetector (PD) arrays with high uniformity and a 100% yield. Ultrathin SiO2 dielectric was deposited using atomic layer deposition (ALD) as an interfacial insulator and passivation layer to suppress the dark current. Each MISIM photodetector pixel exhibits an ultralow dark current of 3.36 x 10(-13) A and a peak responsivity of 47.8-mA/W under 290-nm illumination wavelength at 10 V bias. The photoresponse, with a cut-off wavelength at around 400-nm, illustrates a UV/visible rejection ratio of more than 103. In addition, the coefficients of variation of dark current and photocurrent are calculated to be 1.7% and 3.4%, respectively, showing a neglectable pixel-to-pixel variation. Finally, clear UV detection images of target objects with high spatial resolution have been obtained, verifying the capability of the array to serve as an image sensor.