Fabrication and Characterization of a Silicon Carbide Based Schottky Barrier Diode

被引：5
作者：
Shekhawat, Rajesh Singh [1 ]
Islam, Sk. Masiul [2 ,3 ]
Kumar, Sanjeev [3 ,4 ]
Singh, Sumitra [2 ,3 ]
Singh, Dheerendra [1 ]
Bhattacharya, Sudipta [5 ]
机构：
[1] Birla Inst Technol & Sci, Dept Elect & Elect Engn, Pilani 333031, Rajasthan, India
[2] Cent Elect Engn Res Inst, Semicond Sensors & Microsyst Grp, CSIR, CEERI, Pilani 333031, Rajasthan, India
[3] Acad Sci & Innovat Res AcSIR, CSIR, CEERI Campus, Pilani 333031, India
[4] Cent Elect Engn Res Inst, Semicond Proc Technol Grp, CSIR, CEERI, Pilani 333031, Rajasthan, India
[5] Combat Vehicles Res & Dev Estab CVRDE, Chennai 600054, Tamil Nadu, India
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2023年 / 52卷 / 11期
关键词：
Schottky diode; metal-semiconductor; silicon carbide; adhesion; current-voltage; P-TYPE; I-V; CONTACTS;
D O I：
10.1007/s11664-023-10647-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we report the fabrication and characterization of a Schottky diode containing a metal-semiconductor Schottky junction. The metal-semiconductor Schottky contact was formed using nickel (Ni) as the metal and silicon carbide (4H-SiC) as the semiconducting material. The metal-semiconductor Schottky diode array was fabricated on 350-mu m-thick 4H-SiC (0001) substrates. The Schottky contact was formed using Ni, and a triple layer of Ti/Pt/Au was used for the ohmic contact. Deposition of Ni-Cr alloy on 4H-SiC was carried out to improve the adhesion at the metal-semiconductor interface. Based on the current-voltage (I-V) characteristics, the device output parameter values for turn-on voltage, forward current at 5 V, reverse saturation current, barrier height (f(B)) and ideality factor (?) were 1 V, 2.57 mA, 652 nA, 0.935 eV and 1.296, respectively. A band diagram is proposed to explain the charge transport phenomena. [GRAPHICS]
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收藏
页码：7221 / 7229
页数：9
相关论文
共 36 条
[1]   Density and Thermal Expansion of High Purity Nickel over the Temperature Range from 150 K to 2030 K [J].
Abdullaev, R. N. ;
Kozlovskii, Yu. M. ;
Khairulin, R. A. ;
Stankus, S. V. .
INTERNATIONAL JOURNAL OF THERMOPHYSICS, 2015, 36 (04) :603-619
[2]   Photovoltaic solar cells based on graphene/gallium arsenide Schottky junction [J].
Ansari, Zeeshan Alam ;
Singh, Thokchom Jayenta ;
Islam, Sk Masiul ;
Singh, Sumitra ;
Mahala, Pramila ;
Khan, Afzal ;
Singh, Khomdram Jolson .
OPTIK, 2019, 182 :500-506
[3]  
Baliga B.J., 2008, Fundamentals of Power Semiconductor Devices, DOI DOI 10.1007/978-0-387-47314-7
[4]  
Baliga B.J., 2019, WIDE BANDGAP SEMICON
[5]   Barrier height tuning in Ti/4H-SiC Schottky diodes [J].
Bellocchi, G. ;
Vivona, M. ;
Bongiorno, C. ;
Badala, P. ;
Bassi, A. ;
Rascuna, S. ;
Roccaforte, F. .
SOLID-STATE ELECTRONICS, 2021, 186
[6]   Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior [J].
Brezeanu, G. ;
Pristavu, G. ;
Draghici, F. ;
Badila, M. ;
Pascu, R. .
JOURNAL OF APPLIED PHYSICS, 2017, 122 (08)
[7]   Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures [J].
Dong, Sheng-Xu ;
Bai, Yun ;
Tang, Yi-Dan ;
Chen, Hong ;
Tian, Xiao-Li ;
Yang, Cheng-Yue ;
Liu, Xin-Yu .
CHINESE PHYSICS B, 2018, 27 (09)
[8]   Design and fabrication of graphene/CdS Schottky junction for photovoltaic solar cell applications [J].
Get, Rubina ;
Islam, Sk. Masiul ;
Singh, Sumitra ;
Mahala, Pramila .
OPTIK, 2022, 266
[9]   Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4H-silicon carbide [J].
Gora, V. E. ;
Chawanda, A. ;
Nyamhere, C. ;
Auret, F. D. ;
Mazunga, F. ;
Jaure, T. ;
Chibaya, B. ;
Omotoso, E. ;
Danga, H. T. ;
Tunhuma, S. M. .
PHYSICA B-CONDENSED MATTER, 2018, 535 :333-337
[10]   Improved electrical parameters of vacuum annealed Ni/4H-SiC (0001) Schottky barrier diode [J].
Gupta, Sanjeev K. ;
Azam, A. ;
Akhtar, J. .
PHYSICA B-CONDENSED MATTER, 2011, 406 (15-16) :3030-3035
1234