A multi-parameter fitting method based on matrix transformation for device aging modeling

被引：1

作者：

Sang, Qianqian ^{[1
]}

Yang, Xinhuan ^{[1
]}

Zhang, Jianyu ^{[2
]}

Wang, Chuanzheng ^{[3
]}

Yu, Mingyan ^{[3
]}

Zhao, Yuanfu ^{[3
]}

机构：

[1] Hangzhou Dianzi Univ, Sch Elect Informat, Hangzhou 310018, Peoples R China

[2] Beijing Microelect Technol Inst, Beijing 100076, Peoples R China

[3] Hangzhou Dianzi Univ, Fac Elect Informat, Hangzhou 310018, Peoples R China

来源：

MICROELECTRONICS RELIABILITY | 2023年 / 142卷

关键词：

Device aging modeling; Multi-parameter fitting; Multi-dimensional device model;

D O I：

10.1016/j.microrel.2023.114913

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper establishes an HCI (Hot Carrier Injection) aging model on NMOS device, focusing on the simultaneous degradation of multiple parameters (drain current in saturation region (Idsat) and threshold voltage (Vth)) in the process of extracting model parameters. In this paper, a matrix transformation method is used to convert the electrical parameters of device aging into SPICE model parameters, so as to construct the multi-dimensional model of device aging. In addition, the impact of temperature (T) and device size on the model coefficients is considered to improve the precision of aging model. The approach proposed in this work could also be used to model other devices' aging process.

引用

页数：5

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