Aluminum tantalum oxide thin films deposited at low temperature by pulsed direct current reactive magnetron sputtering for dielectric applications

被引:5
作者
Drevet, Richard [1 ]
Soucek, Pavel [1 ]
Mares, Pavel [2 ]
Ondracka, Pavel [1 ]
Dubau, Martin [2 ]
Kolonits, Tamas [3 ]
Czigany, Zsolt [3 ]
Balazsi, Katalin [3 ]
Vasina, Petr [1 ]
机构
[1] Masaryk Univ, Dept Plasma Phys & Technol, Kotlarska 2, CZ-61137 Brno, Czech Republic
[2] HVM Plasma Spol R O S, Hutmance 347-2, Prague 5, Czech Republic
[3] HUN REN Ctr Energy Res, Inst Tech Phys & Mat Sci, Konkoly Thege M ut 29-33, H-1121 Budapest, Hungary
关键词
Reactive magnetron sputtering; Ternary oxide; Aluminum; Tantalum; Dielectric strength; Dielectric breakdown; BREAKDOWN STRENGTH; THERMAL-STABILITY; CONSTANT; MECHANISM; CERAMICS; YIELD; SIO2;
D O I
10.1016/j.vacuum.2023.112881
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This research aims at studying aluminum tantalum oxide thin films (AlxTayOz) deposited at low temperature for dielectric applications. These ternary oxide layers are synthesized at 180 degrees C by physical vapor deposition (PVD), specifically the mid-frequency pulsed direct current reactive magnetron sputtering. The deposition process uses targets made of a mixture of aluminum and tantalum in various proportions. Four target compositions are studied containing 95 at.%, 90 at.%, 80 at.%, and 70 at.% of aluminum, corresponding to 5 at.%, 10 at.%, 20 at.%, and 30 at.% of tantalum, respectively. The ternary oxide thin films of AlxTayOz are compared to aluminum oxide (AlxOz) and tantalum oxide (TayOz) layers produced in the same experimental conditions. The AlxTayOz thin films are dense, uniform, and amorphous regardless of the experimental conditions used in this study. Their chemical composition changes as a function of the target composition. The oxygen flow used during deposition also affects the chemical composition of the oxide layers and the deposition rate. The oxide thin films with tantalum are deposited at higher deposition rates and contain more oxygen. Tantalum also promotes the amorphization of the oxide layers. The highest dielectric strength is measured for the thin film containing a low amount of tantalum combined with a high amount of oxygen.
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页数:14
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