Voltage Controlled Ring Oscillator with Phase Compensation Technique for Jitter Reduction in 180 nm CMOS Technology

被引:0
|
作者
Mishra, Abhishek [1 ]
Singh, Anil [1 ]
Agarwal, Alpana [1 ]
机构
[1] Thapar Inst Engn & Technol, Elect & Commun Engn Dept, Patiala, Punjab, India
关键词
Voltage controlled ring oscillator; pulse width modulation; jitter; phase compensator; excess phase discriminator; injection locking; NOISE; PLL; PERFORMANCE;
D O I
10.1142/S0218126624501433
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper presents a novel jitter reduction technique for a voltage-controlled ring oscillator (VCRO). This technique is helpful in employing VCRO-based circuits like Analog to Digital Converter (ADC), Phase Locked Loop (PLL) and time-based circuits whose performance is severely degraded by high jitter. In the proposed technique, the jitter is extracted using Excess Phase Discrimination (EPD) block and is transformed into Pulse Width Modulated (PWM) signal, which is then fed into the Phase Compensator (PC) block. This block reduces the jitter by about half its value after enabling the Single Ended Injection Locking (SEIL). The proposed work is designed in SCL 180nm CMOS technology at 1.8 V supply. On enabling the proposed circuit, the Root Mean Square (RMS) jitter reduces from 5.94 to 2.58 ps (about 56%) for VCRO running at 58 MHz and consumes a total power of 375.84 mu W. The overall performance of the proposed circuit does not vary much in the post-layout simulations, hence demonstrating the effectiveness of the proposed technique.
引用
收藏
页数:24
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