A 14T radiation hardened SRAM for space applications with high reliability

被引:3
作者
Bai, Na [1 ,2 ,5 ]
Qin, Zhangyi [1 ,3 ]
Li, Li [2 ,4 ]
Xu, Yaohua [1 ]
Wang, Yi [1 ,2 ]
机构
[1] Anhui Univ, Informat Mat & Intelligent Sensing Lab Anhui Prov, Hefei 230601, Anhui, Peoples R China
[2] Anhui Univ, Natl Engn Res Ctr Agroecol Big Data Anal & Applica, Hefei 230601, Anhui, Peoples R China
[3] Jincheng Res Inst Opo mechatron Ind, Jincheng 048000, Shanxi, Peoples R China
[4] Shanxi Key Lab Adv Semicond Optoelect Devices & In, Jincheng 048000, Shanxi, Peoples R China
[5] Anhui Univ, Informat Mat & Intelligent Sensing Lab Anhui Prov, Hefei 230601, Anhui, Peoples R China
关键词
critical charge; memory reconfiguration; radiation hardened SRAM cell; soft error; static noise margin (SNM); CELL; SINGLE; DESIGN;
D O I
10.1002/cta.3889
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Static Random Access Memory (SRAM) is vital in aerospace applications, but it may experience soft errors in strong radiation environments. This paper proposes a reconfigurable radiation SRAM with two operating modes catering to different environmental requirements: (1) traditional triple modular redundancy mode used when the radiation environment is strong and (2) SRAM cell expansion mode used when the radiation is not very strong. For example, when the memory capacity of a single module is 8 k, the memory capacity is 8 k in traditional triple modular redundancy mode, but it can be tripled to 24 K in extended mode. As can be obviously seen, this design can adjust the size according to the needs. In SRAM cell expansion mode, the proposed 14T SRAM cell enables the memory to maintain radiation resistance. Compared with DICE, RHBD-12T, and WHIT, the read speed is improved by 3.8%, 5.7%, and 11.5% respectively, but compared with WE-QUATRO, the read speed is reduced by 1.9%. The hold static noise margin is 1.378 times than DICE, 1.201 times than WE-QUATRO, 1.045 times than RHBD-12T, and 1.14 times than WHIT, respectively. The proposed 14T cell in this paper exhibits the highest critical charge value compared with the other cells. Combined with the expansion mode of the reconfiguration design, it shows great stability. This paper combines the traditional triple modular redundancy with SRAM cell architecture to create a reconfigurable system architecture, allowing for memory reconfiguration, and proposes a 14T hardened cell structure based on the redundant node reinforcement method. This structure enables the cell to maintain radiation performance even in memory expansion mode.image
引用
收藏
页码:2956 / 2970
页数:15
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