High-temperature resistivity in rare-earth nickelates films

被引:0
|
作者
Stupakov, Alexandr [1 ]
Kocourek, Tomas [1 ]
de Prado, Esther [1 ]
More-Chevalier, Joris [1 ]
Vetokhina, Volha [1 ]
Dejneka, Alexandr [1 ]
Tyunina, Marina [1 ,2 ]
机构
[1] Czech Acad Sci, Inst Phys, Slovance 2, Prague 18200, Czech Republic
[2] Univ Oulu, Fac Informat Technol & Elect Engn, Microelect Res Unit, POB 4500, FI-90014 Oulu, Finland
关键词
Rare-earth nickelate; Perovskite oxide; Hopping conductivity; Small polaron; Metal-insulator transition; METAL-INSULATOR-TRANSITION; THIN-FILMS; NONSTOICHIOMETRY; GROWTH;
D O I
10.1016/j.jmmm.2023.171256
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We expand the temperature interval of the resistivity measurement to clarify the charge transport mechanisms in the rare-earth nickelates ReNiO3. Thin films of LaNiO3 demonstrate an expected metallic behavior at high temperatures: a perfect linear rise of the resistivity rho proportional to T is confirmed above room temperature. However, NdNiO3 films characterized by a sharp metal-to-insulator transition display a noticeable deviation of their high-temperature resistivity from the metallic linear relation. This deviation is suggested to originate from an additional thermally activated hopping transport. High-temperature hopping conductivity is also found in SmNiO3 films. Carrier localization due to disorder and the formation of small polarons is discussed as being responsible for hopping.
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页数:7
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