A K-Band Bulk Acoustic Wave Resonator Using Periodically Poled Al0.72Sc0.28N

被引：25

作者：

Izhar, Merrilyn M. A. ^{[1
]}

Fiagbenu, Merrilyn M. A. ^{[1
]}

Musavigharavi, Pariasadat ^{[1
]}

Du, Xingyu ^{[1
]}

Leathersich, Jeff ^{[2
]}

Moe, Craig ^{[2
]}

Kochhar, Abhay A. ^{[2
]}

Stach, Eric A. ^{[3
]}

Vetury, Ramakrishna H. ^{[2
]}

Olsson, Roy H. ^{[1
]}

机构：

[1] Univ Penn, Dept Elect & Syst Engn, Philadelphia, PA 19104 USA

[2] Akoustis Inc, Huntersville, NC 28078 USA

[3] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 07期

关键词：

Aluminum scandium nitride (AlScN); bulk acoustic wave (BAW); periodically poled piezoelectric film (P3F); acoustic resonator;

D O I：

10.1109/LED.2023.3282170

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a K-band bulk acoustic wave (BAW) resonator constructed from an Al0.72Sc0.28 N periodically poled piezoelectric film. The resonators exhibited dominant resonance responses around 20 GHz, approximately four times higher than the resonance frequencies of similar unpoled devices fabricated on the same wafer. Resonators with a quality factor (Q(p)) of 160 and an electromechanical coupling (k(t)(2)) of 8.23% were achieved. The figure of merits (defined as FoM(I) = k(t)(2) Q(p) and FoM(II) = f(p)FoM(I) x 10(-9)) of the resonator are 13.2 and 274 which are higher than most reported acoustic resonators operating at K-band (18 GHz to 27 GHz) or higher frequency. The experimental results suggest that periodically poled BAW resonators are promising for emerging RF filter and oscillator applications at K-band frequencies.

引用

页码：1196 / 1199

页数：4

共 32 条

[1] Aigner R, 2018, INT EL DEVICES MEET
[2] SAW and BAW Technologies for RF Filter Applications: A Review of the Relative Strengths and Weaknesses
Aigner, Robert
[J]. 2008 IEEE ULTRASONICS SYMPOSIUM, VOLS 1-4 AND APPENDIX, 2008, : 582 - 589
[3] Controlling Residual Stress and Suppression of Anomalous Grains in Aluminum Scandium Nitride Films Grown Directly on Silicon
Beaucejour, Rossiny
Roebisch, Volker
Kochhar, Abhay
Moe, Craig G.
Hodge, Michael David
Olsson, Roy H., III
[J]. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2022, 31 (04) : 604 - 611
[4] Bogner A, 2020, PROC IEEE MICR ELECT, P1258, DOI 10.1109/MEMS46641.2020.9056296
[5] Review of substrate-integrated waveguide circuits and antennas
Bozzi, M.
Georgiadis, A.
Wu, K.
[J]. IET MICROWAVES ANTENNAS & PROPAGATION, 2011, 5 (08) : 909 - 920
[6] Enhancing RF Bulk Acoustic Wave Devices
Chauhan, Vikrant
Huck, Christian
Frank, Astrid
Akstaller, Wolfgang
Weigel, Robert
Hagelauer, Amelie
[J]. IEEE MICROWAVE MAGAZINE, 2019, 20 (10) : 56 - 70
[7] Ding A., APPL PHYS LETT, V116
[8] Al0.68Sc0.32N Lamb wave resonators with electromechanical coupling coefficients near 10.28%
Esteves, Giovanni
Young, Travis R.
Tang, Zichen
Yen, Sean
Bauer, Todd M.
Henry, Michael D.
Olsson, Roy H., III
[J]. APPLIED PHYSICS LETTERS, 2021, 118 (17)
[9] X-band filters utilizing A1N thin film bulk acoustic resonators
Hara, Motoaki
Yokoyama, Tsuyoshi
Ueda, Masanori
Satoh, Yoshio
[J]. 2007 IEEE ULTRASONICS SYMPOSIUM PROCEEDINGS, VOLS 1-6, 2007, : 1152 - 1155
[10] Jiang S., 2011, Journal of Electromagnetic Analysis and Applications, V3, P261, DOI DOI 10.4236/JEMAA.2011.37042

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