Weak antilocalization and localization in Cd3As2 thin film

被引：0
|
作者：
Nikulicheva, Tatyana B. [1 ]
Zakhvalinskii, Vasilii S. [1 ]
Pilyuk, Evgeny A. [1 ]
Ivanov, Oleg N. [1 ,2 ]
Morocho, Alexander A. [1 ,3 ]
Nikulichev, Vitaly B. [2 ]
Yapryntsev, Maksim N. [1 ]
机构：
[1] Belgorod Natl Res Univ, Belgorod 308015, Russia
[2] Belgorod State Technol Univ, Belgorod 308012, Russia
[3] Higher Polytech Sch Chimborazo, Riobamba 060155, Ecuador
来源：
CHINESE JOURNAL OF PHYSICS | 2023年 / 83卷
关键词：
Weak antilocalization; Weak localization; Dirac materials; Cd3As2;
D O I：
10.1016/j.cjph.2023.03.020
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this work we present the results of magnetoresistance (MR) examination for a Cd3As2 thin film (with thickness of -80 nm) deposited on sapphire substrate. Within the temperature 2-10 K range, the effect of weak antilocalization (WAL) was observed. From the study of magnetore-sistance, WAL appears due to surface states and is well described by Hikami-Larkin-Nagaoki model. The calculated value of the phase coherence length L phi changes as a function of temper-ature T according to the power law L phi -T-0.43, which indicates the presence of 2D topological surface states.
引用
收藏
页码：287 / 291
页数：5
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