Review of Defect Passivation for NiOx-Based Inverted Perovskite Solar Cells

被引:29
作者
Zhu, Ruixue [1 ]
Guan, Nianci [1 ]
Wang, Dourong [1 ]
Bao, Yaqi [1 ]
Wu, Zhongbin [1 ]
Song, Lin [1 ]
机构
[1] Northwestern Polytech Univ, Inst Flexible Elect IFE, Frontiers Sci Ctr Flexible Elect, Xian 710072, Peoples R China
关键词
HTL; NiOx; defect passivation; interface modification; additives; perovskite solar cells; HOLE TRANSPORT LAYER; DOPED NICKEL-OXIDE; HIGHLY EFFICIENT; HIGH-PERFORMANCE; ROOM-TEMPERATURE; PHOTOVOLTAIC PERFORMANCE; HALIDE PEROVSKITES; COPPER IODIDE; STABILITY; HETEROJUNCTION;
D O I
10.1021/acsaem.2c03127
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In recent years, organic-inorganic hybrid perovskite solar cells (PSCs) have attracted extensive attention due to their high power conversion efficiency (PCE) and simple preparation process. The selection and optimization of the hole transport layer (HTL) are very important for device performance. Compared to other HTLs, nickel oxide (NiOx) has been widely used in PSCs due to its good chemical stability, high hole mobility, and simple preparation method. This review begins with the application of NiOx HTL in planar PSCs and systematically introduces the influence of the structure and photoelectrical properties of devices by doping and surface modification. The effects of NiOx modification on the power conversion efficiency (PCE), filling factor (FF), open-circuit voltage (Voc), short-circuit current (Jsc), and stability of PSCs are reviewed in detail from the perspectives of energy-level matching, hole mobility, and crystallinity. Finally, the future of NiOx-based planar PSCs is discussed.
引用
收藏
页码:2098 / 2121
页数:24
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