Structure, electrical, and dielectric properties of Ba1-xYxTi(1-x/4)O3 ceramics sintering at low temperature

The sintering temperature of BaTiO3, prepared by solid-state reaction route, is in general considerably above 1250 degrees C to obtain dense ceramic. In this regard, we investigate the effect of low sintering temperature on the electrical and dielectric properties of lead-free of Ba1-xYxTi(1-x/4)O3 (x = 0 and 0.02) ceramics. These structures' tetragonality was identified using powder X-ray diffraction and Raman analysis. BaTiO3 has a uniform grain size, but the doped sample consists of a different shape and size with homogeneous morphology and dense microstructure, as observed by scanning electron microscopy. Through dielectric measurements, the Y-doped BT ceramic has a higher Curie temperature (T-C) and dielectric constant (126 degrees C and 6999) at 5 kHz, which explains a dense microstructure. Besides, the dielectric loss was less than 10(-1) in the entire temperature range from room temperature to 200 degrees C. The dielectric constant modeling confirmed the presence of first-order and displacive transitions for both samples, but the diffusive behavior occurred in the undoped sample. Complex impedance and modulus studies have shown the relaxation behavior in Ba0.98Y0.02Ti0.995O3 to be of Debye type.