Plasmonic electro-optic modulators on lead zirconate titanate platform

被引:3
|
作者
Yezekyan, Torgom [1 ]
Thomaschewski, Martin [2 ]
Thrane, Paul Conrad Vaagen [1 ,3 ]
Bozhevolnyi, Sergey I. [1 ]
机构
[1] Univ Southern Denmark, Ctr Nano Opt, Odense, Denmark
[2] CALTECH, Dept Appl Phys & Mat Sci, Pasadena, CA USA
[3] SINTEF Oslo, Dept Microsyst & Nanotechnol, Oslo, Norway
关键词
electro-optic modulators; PZT; plasmonic modulators; ELECTRICAL-PROPERTIES; SILICON; NONLINEARITIES; FILMS; PZT;
D O I
10.1515/nanoph-2024-0039
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The advancement in material platforms exhibiting strong and robust electro-optic effects is crucial for further progress in developing highly efficient and miniaturized optoelectronic components with low power consumption for modern optical communication systems. In this work, we investigate thin-film lead zirconate titanate (PZT) substrates grown by a chemical solution deposition technique as a potential platform for on-chip plasmonic electro-optic modulators. A high modulation depth (>40 %) is achieved with 15 mu m-long electro-optic directional coupler modulators. An unusual cutoff in the modulation frequency response at similar to 200 kHz is observed and further studied with respect to possible reorientation effects. Second-harmonic generation signals are found influenced by the externally applied electric field, indicating that the domain reorientation effect can be responsible for the unusual frequency response observed.
引用
收藏
页码:3591 / 3598
页数:8
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