Neuromorphic functionality of ferroelectric domain walls

被引:20
作者
Sharma, Pankaj [1 ,2 ,3 ]
Seidel, Jan [2 ,3 ]
机构
[1] Flinders Univ S Australia, Coll Sci & Engn, Bedford Pk, Adelaide, SA 5042, Australia
[2] UNSW Australia, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
[3] UNSW Australia, ARC Ctr Excellence Future Low Energy Elect Technol, Sydney, NSW 2052, Australia
来源
NEUROMORPHIC COMPUTING AND ENGINEERING | 2023年 / 3卷 / 02期
基金
澳大利亚研究理事会;
关键词
synapses; topological; memristor; solitons; ELECTRON-GAS; CONDUCTIVITY; RESISTANCE; BOUNDARIES; BEHAVIOR;
D O I
10.1088/2634-4386/accfbb
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Mimicking and replicating the function of biological synapses with engineered materials is a challenge for the 21st century. The field of neuromorphic computing has recently seen significant developments, and new concepts are being explored. One of these approaches uses topological defects, such as domain walls in ferroic materials, especially ferroelectrics, that can naturally be addressed by electric fields to alter and tailor their intrinsic or extrinsic properties and functionality. Here, we review concepts of neuromorphic functionality found in ferroelectric domain walls and give a perspective on future developments and applications in low-energy, agile, brain-inspired electronics and computing.
引用
收藏
页数:9
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