High linearity U-band power amplifier design: a novel intermodulation point analysis method

被引：6

作者：

Cui, Jie ^{[1
]}

Li, Peipei ^{[1
]}

Sheng, Weixing ^{[1
]}

机构：

[1] Nanjing Univ Sci & Technol, Sch Elect & Opt Engn, Nanjing 210094, Peoples R China

来源：

FRONTIERS OF INFORMATION TECHNOLOGY & ELECTRONIC ENGINEERING | 2023年 / 24卷 / 01期

基金：

中国国家自然科学基金;

关键词：

CMOS silicon-on-insulator (SOI); Linearity analysis; Milimeter wave (mm-Wave); Power amplifier; TN92; TN43; CMOS; TRANSFORMER; EFFICIENCY;

D O I：

10.1631/FITEE.2200082

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

A power amplifier's linearity determines the emission signal's quality and the efficiency of the system. Nonlinear distortion can result in system bit error, out-of-band radiation, and interference with other channels, which severely influence communication system's quality and reliability. Starting from the third-order intermodulation point of the milimeter wave (mm-Wave) power amplifiers, the circuit's nonlinearity is compensated for. The analysis, design, and implementation of linear class AB mm-Wave power amplifiers based on GlobalFoundries 45 nm CMOS silicon-on-insulator (SOI) technology are presented. Three single-ended and differential stacked power amplifiers have been implemented based on cascode cells and triple cascode cells operating in U-band frequencies. According to nonlinear analysis and on-wafer measurements, designs based on triple cascode cells outperform those based on cascode cells. Using single-ended measurements, the differential power amplifier achieves a measured peak power-added efficiency (PAE) of 47.2% and a saturated output power (P-sat) of 25.2 dBm at 44 GHz. The amplifier achieves a P-sat higher than 23 dBm and a maximum PAE higher than 25% in the measured bandwidth from 44 GHz to 50 GHz.

引用

页码：176 / 186

页数：11

共 26 条

[1] Linearization as a Solution for Power Amplifier Imperfections: A Review of Methods [J].

Borel, Andzej ;

Barzdenas, Vaidotas ;

Vasjanov, Aleksandr .

ELECTRONICS, 2021, 10 (09)

[2] A broadband, high isolation millimeter-wave CMOS power amplifier using a transformer and transmission line matching topology [J].

Chen, Bo ;

Shen, Li ;

Liu, Supeng ;

Zheng, Yuanjin ;

Gao, Jianjun .

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2014, 81 (02) :537-547

[3] A 9.8-30.1 GHz CMOS low-noise amplifier with a 3.2-dB noise figure using inductor- and transformer-based gm-boosting techniques [J].

Chen, Hongchen ;

Zhu, Haoshen ;

Wu, Liang ;

Che, Wenquan ;

Xue, Quan .

FRONTIERS OF INFORMATION TECHNOLOGY & ELECTRONIC ENGINEERING, 2021, 22 (04) :586-598

[4]

Cripps SC., 2006, RF POWER AMPLIFIERS, V2nd Ed., P5

[5] Stacking the Deck for Efficiency [J].

Cui, Jie ;

Helmi, Sultan ;

Tang, Yingheng ;

Mohammadi, Saeed .

IEEE MICROWAVE MAGAZINE, 2016, 17 (12) :55-69

[6] A Wideband Variable Gain LNA With High OIP3 for 5G Using 40-nm Bulk CMOS [J].

Elkholy, Mohamed ;

Shakib, Sherif ;

Dunworth, Jeremy ;

Aparin, Vladimir ;

Entesari, Kamran .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2018, 28 (01) :64-66

[7] A Novel Fully Differential CMOS Class-E Power Amplifier with Higher Output Power and Efficiency for IoT Application [J].

Ghorbani, A. R. ;

Ghaznavi-Ghoushchi, M. B. .

WIRELESS PERSONAL COMMUNICATIONS, 2017, 97 (02) :3203-3213

[8]

Helmi SR, 2016, PROC IEEE MTT S INT, P1, DOI [10.1109/MWSYM.2016.7540026, DOI 10.1109/MWSYM.2016.7540026]

[9] High-Efficiency Microwave and mm-Wave Stacked Cell CMOS SOI Power Amplifiers [J].

Helmi, Sultan R. ;

Chen, Jing-Hwa ;

Mohammadi, Saeed .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2016, 64 (07) :2025-2038

[10] 45-GHz and 60-GHz 90 nm CMOS power amplifiers with a fully symmetrical 8-way transformer power combiner [J].

Jiang, Zhengdong ;

Guo, Kaizhe ;

Huang, Peng ;

Fan, Yiming ;

Zhao, Chenxi ;

Ban, Yongling ;

Liu, Jun ;

Kang, Kai .

SCIENCE CHINA-INFORMATION SCIENCES, 2017, 60 (08)

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