Design of a 22-55 GHz SPDT Switch MMIC with GaAs PIN Diodes

被引：1

作者：

Noorizadeh, Sahand ^{[1
]}

Ngamate, Stephen ^{[2
]}

Nguyen, Trang D. ^{[2
]}

机构：

[1] Northrop Grumman, Falls Church, VA 22042 USA

[2] NI, Austin, TX USA

来源：

2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC | 2023年

关键词：

millimeter-wave; mmWave; SPDT; switch; MMIC; PIN diode; hot via;

D O I：

10.23919/EuMIC58042.2023.10288792

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Design and measured performance of a mmWave reflective SPDT switch MMIC with vertical RF PIN diodes on GaAs are presented. The switch design uses a modified double shunt topology with distributed switching elements to extend the bandwidth beyond the limitations of the classic shunt topology. The bias feed and filtering network is integrated on-chip. The RF transitions are implemented with hot vias to a PCB to which the MMIC is mounted with silver epoxy. In the 22-55 GHz frequency range, the measured insertion loss is less than 1 dB, return loss is better than 15 dB, and the isolation is greater than 40 dB.

引用

页码：261 / 264

页数：4

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