Phase transition behavior and electrical resistance stability of Ge2Sb2Te5/ Sb superlattice-like films on a flexible substrate

被引：3
作者：
Cao, Liwen [1 ]
Hu, Yifeng [1 ,2 ]
机构：
[1] Jiangsu Univ Technol, Sch Math & Phys, Changzhou 213000, Peoples R China
[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2023年 / 49卷 / 15期
基金：
中国国家自然科学基金;
关键词：
Flexible memory; Ge2Sb2Te5; Sb superlattice-like films; Bending resistance; Phase change memory; THIN-FILMS; CHANGE MEMORY;
D O I：
10.1016/j.ceramint.2023.05.038
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In order to validate the flexible storage potential, [Ge2Sb2Te5(3 nm)/Sb(7 nm)]5 superlattice-like phase change films on flexible polyetheretherketone substrates were prepared by magnetron sputtering. The phase transition behavior and the effect of different bending cycles on the properties were investigated. Compared with conventional rigid Si/SiO2 substrate, [Ge2Sb2Te5(3 nm)/Sb(7 nm)]5 films based on a flexible substrate possessed better thermal stability and surface adhesion. The superlattice-like structure was confirmed by transmission electron microscopy. PCM devices based on polyetheretherketone substrates were fabricated and the electrical conversion characteristics before and after bending were verified and compared.
引用
收藏
页码：25085 / 25091
页数：7
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