Exfoliated Se nanoparticles decorated on MoS2/paper-based heterojunction as a flexible, self-powered and highly responsive photodetector

被引:7
作者
Dutta, Debangana [1 ]
Reddy, Kumaar Swamy [2 ,3 ]
Badhulika, Sushmee [1 ,3 ]
机构
[1] Indian Inst Technol Hyderabad, Ctr Interdisciplinary Programs, Integrated Sensor Syst, Hyderabad, India
[2] Int Adv Res Ctr Powder Met & New Mat ARCI, Ctr Nanomat, Hyderabad, India
[3] Indian Inst Technol Hyderabad, Dept Elect Engn, Hyderabad, India
关键词
Selenium; MoS2; discrete(localized) heterojunction; Self-powered photodetector; Broadband; Flexible; UV PHOTODETECTOR; LARGE-AREA; PERFORMANCE; PHOTORESPONSE; FABRICATION;
D O I
10.1016/j.mssp.2023.107610
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Self-powered heterostructure based photodetectors are of great research interest owing to their zero-power consumption, enhanced light-matter interaction, and the ability to respond in harsh environmental conditions. Selenium (Se) nanoparticles have been recently explored in photodetectors due to their high absorption coefficient and superior light-sensing ability. However, most reported Selenium based photoconductors utilize sophisticated device fabrication methodology, requiring regulated environmental conditions, elevated temperature and face flexibility issues. This work demonstrates a discrete(localized) heterojunction of exfoliated Selenium decorated on hydrothermally grown MoS2/paper-based high-performance, flexible, and self-powered photodetector. X-ray Diffraction and Raman Spectroscopy studies reveal the presence of hexagonal Se and the SEM image shows the uniformly grown MoS2 on cellulose paper. It also confirms the presence of Se clustered nanoparticles. The hybrid heterostructure device displays broadband response in the Vis-NIR region. Upon light illumination, a built-in field is generated due to the efficient separation of the charge carriers, making the fabricated device to operate at zero bias. The as-fabricated device exhibits superior responsivity of 0.14 A/W and 0.49 A/W and detectivity of 4.55 x 10(11) Jones (intensity- 35.8 mW/cm(2)) and 5.01 x 10(10) Jones (intensity- 30.08 mW/cm(2)) upon Vis and NIR irradiation, respectively, at no bias. This superior performance is asserted to the peak absorption of Se nanoparticles in the NIR region. The device also showed superior resistance to bending stress and retained its original characteristics even after multiple bending cycles (similar to 1050). Hence, with this facile device fabrication and simple device architecture strategy, this work paves the way for developing high-performance tensile photodetectors.
引用
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页数:9
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  • [1] Two-dimensional flexible nanoelectronics
    Akinwande, Deji
    Petrone, Nicholas
    Hone, James
    [J]. NATURE COMMUNICATIONS, 2014, 5
  • [2] Electrical contacts to two-dimensional semiconductors
    Allain, Adrien
    Kang, Jiahao
    Banerjee, Kaustav
    Kis, Andras
    [J]. NATURE MATERIALS, 2015, 14 (12) : 1195 - 1205
  • [3] Self-Powered Broadband Schottky Junction Photodetector Based on a Single Selenium Microrod
    Chang, Yu
    Chen, Liang
    Wang, Jianyuan
    Tian, Wei
    Zhai, Wei
    Wei, Bingbo
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2019, 123 (34) : 21244 - 21251
  • [4] Self-Powered Si/CdS Flexible Photodetector with Broadband Response from 325 to 1550 nm Based on Pyro-phototronic Effect: An Approach for Photosensing below Bandgap Energy
    Dai, Yejing
    Wang, Xingfu
    Peng, Wenbo
    Xu, Cheng
    Wu, Changsheng
    Dong, Kai
    Liu, Ruiyuan
    Wang, Zhong Lin
    [J]. ADVANCED MATERIALS, 2018, 30 (09)
  • [5] A flexible self-powered UV-Vis photodetector based on Successive Ionic Layer Adsorption and Reaction (SILAR) deposited CdS on asymmetric contacts
    Dutta, Debangana
    Reddy, Kumaar Swamy
    Badhulika, Sushmee
    [J]. MATERIALS RESEARCH BULLETIN, 2023, 166
  • [6] Phase-Modulated Band Alignment in CdS Nanorod/SnSx Nanosheet Hierarchical Heterojunctions toward Efficient Water Splitting
    Fu, Yanming
    Cao, Fengren
    Wu, Fangli
    Diao, Zhidan
    Chen, Jie
    Shen, Shaohua
    Li, Liang
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2018, 28 (16)
  • [7] A Photoresponsive Rutile TiO2 Heterojunction with Enhanced Electron-Hole Separation for High-Performance Hydrogen Evolution
    Gao, Chaomin
    Wei, Tao
    Zhang, Yanyan
    Song, Xiaohan
    Huan, Yu
    Liu, Hong
    Zhao, Mingwen
    Yu, Jinghua
    Chen, Xiaodong
    [J]. ADVANCED MATERIALS, 2019, 31 (08)
  • [8] Gates B, 2002, ADV FUNCT MATER, V12, P219, DOI 10.1002/1616-3028(200203)12:3<219::AID-ADFM219>3.0.CO
  • [9] 2-U
  • [10] Wafer-scale synthesis of a uniform film of few-layer MoS2 on GaN for 2D heterojunction ultraviolet photodetector
    Goel, Neeraj
    Kumar, Rahul
    Roul, Basanta
    Kumar, Mahesh
    Krupanidhi, S. B.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (37)