Polarization-induced magnetoelectric effect in Fe3Ga/HfO2/Fe3Ga heterojunction

被引：0

作者：

He, Zhijian ^{[1
]}

Zou, Daifeng ^{[2
]}

Yang, Qiong ^{[1
]}

Duan, Tianpeng ^{[1
]}

Tan, Yingjun ^{[1
]}

Lei, Chihou ^{[3
]}

Xie, Shuhong ^{[4
]}

Liu, Yunya ^{[4
]}

机构：

[1] Xiangtan Univ, Sch Mat Sci & Engn, Hunan Prov Key Lab Thin Film Mat & Devices, Xiangtan 411105, Peoples R China

[2] Hunan Univ Sci & Technol, Sch Phys & Elect Sci, Xiangtan 411201, Peoples R China

[3] St Louis Univ, Dept Aerosp & Mech Engn, St Louis, MO 63103 USA

[4] Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2023年 / 16卷 / 12期

基金：

中国国家自然科学基金;

关键词：

heterojunction; first-principles; polarization-induced; magnetoelectric effect; MULTIFERROICS; EXCITATION; BEHAVIOR;

D O I：

10.35848/1882-0786/ad0db8

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fe3Ga/HfO2/Fe3Ga heterojunction possesses reasonable lattice mismatch and good ferroelectric at the nanoscale. However, its magnetoelectric coupling is unexplored. Based on the first-principles calculations, we demonstrate that the magnetoelectric coupling in Fe3Ga/HfO2/Fe3Ga heterojunction is induced by polarization, which is different from the common strain-mediated magnetoelectric effect. The polarization-induced magnetoelectric effect of heterojunction is explained by the analyses of orbital-resolved density of states and spin densities, finding that the interfaces between Fe3Ga and HfO(2 )play an important role in magnetoelectric coupling, offering an alternative pathway for generating magnetoelectric coupling at room temperature.

引用

页数：4

共 50 条

[41] Mossbauer studies of the alloys Fe3Ga4, (Fe1-xTix)3Ga4 and (Fe1-yCry)3Ga4
Kobeissi, MA
Hutchings, JA
Appleyard, PG
Thomas, MF
Booth, JG
JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (32) : 6251 - 6262
[42] Theoretical insights into the interface engineering of /3-Ga 2 O 3 devices with ferroelectric HfO2 gate dielectric: Impact of polarization direction
Su, Jinhao
Zhang, Zhaofu
Gui, Qingzhong
Yu, Wei
Wan, Xuhao
Wang, Anyang
Li, Zeyuan
Cao, Ruyue
Robertson, John
Liu, Sheng
Guo, Yuzheng
SURFACES AND INTERFACES, 2025, 56
[43] Normally-off AlN/β-Ga2O3 field-effect transistors using polarization-induced doping
Song, Kang
Zhang, Haochen
Fu, Houqiang
Yang, Chen
Singh, Rajendra
Zhao, Yuji
Sun, Haiding
Long, Shibing
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 53 (34)
[44] Ferroelectric-controlled magnetoelectric effect at the CrI3/HfO2 interface
Duan, Tianpeng
Zhang, Yun
Jiang, Jie
Pang, Jingman
Liao, Min
Yang, Qiong
PHYSICAL REVIEW B, 2024, 110 (05)
[45] Magnetoelectric effect and toroidal ordering in Ga2-xFexO3
Popov, YF
Kadomtseva, AM
Vorob'ev, GP
Timofeeva, VA
Ustinin, DM
Zvezdin, AK
Tegeranchi, MM
JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 1998, 87 (01) : 146 - 151
[46] SITE PREFERENCE OF THE CR, MN, CO OR NI ATOM IN (FE1-XCRX)3GA, FE1-XMN)3GA, FE1-XCOX)3GA OR FE1-XNIX)3GA
ISHIDA, S
FUJII, S
SHINMURA, N
ASANO, S
JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 (31) : 5115 - 5123
[47] PHOTOMAGNETIC EFFECT KINETICS IN ALPHA-FE2O3 - GA CRYSTALS
PATRIN, GS
VOLKOV, NV
PETRAKOVSKII, GA
FIZIKA TVERDOGO TELA, 1994, 36 (05): : 1385 - 1391
[48] Concentration Space of Homogeneous Garnet in the System Ga2O3-(Y, Bi)3(Fe, Ga)5O12-Fe2O3
Smirnova, M. N.
Nipan, G. D.
Nikiforova, G. E.
DOKLADY CHEMISTRY, 2018, 480 (1) : 99 - 102
[49] Enhanced photorefractive properties of LiNbO3:Fe crystals by HfO2 codoping
Li, Shuqi
Liu, Shiguo
Kong, Yongfa
Xu, Jingjun
Zhang, Guangyin
APPLIED PHYSICS LETTERS, 2006, 89 (10)
[50] Investigations of the light-induced scattering varied with HfO2 codoping in LiNbO3:Fe crystals
Yan, Wenbo
Chen, Hongjian
Shi, Lihong
Liu, Shiguo
Kong, Yongfa
APPLIED PHYSICS LETTERS, 2007, 90 (21)

← 1 2 3 4 5 →