Polarization-induced magnetoelectric effect in Fe3Ga/HfO2/Fe3Ga heterojunction

被引：0

作者：

He, Zhijian ^{[1
]}

Zou, Daifeng ^{[2
]}

Yang, Qiong ^{[1
]}

Duan, Tianpeng ^{[1
]}

Tan, Yingjun ^{[1
]}

Lei, Chihou ^{[3
]}

Xie, Shuhong ^{[4
]}

Liu, Yunya ^{[4
]}

机构：

[1] Xiangtan Univ, Sch Mat Sci & Engn, Hunan Prov Key Lab Thin Film Mat & Devices, Xiangtan 411105, Peoples R China

[2] Hunan Univ Sci & Technol, Sch Phys & Elect Sci, Xiangtan 411201, Peoples R China

[3] St Louis Univ, Dept Aerosp & Mech Engn, St Louis, MO 63103 USA

[4] Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2023年 / 16卷 / 12期

基金：

中国国家自然科学基金;

关键词：

heterojunction; first-principles; polarization-induced; magnetoelectric effect; MULTIFERROICS; EXCITATION; BEHAVIOR;

D O I：

10.35848/1882-0786/ad0db8

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fe3Ga/HfO2/Fe3Ga heterojunction possesses reasonable lattice mismatch and good ferroelectric at the nanoscale. However, its magnetoelectric coupling is unexplored. Based on the first-principles calculations, we demonstrate that the magnetoelectric coupling in Fe3Ga/HfO2/Fe3Ga heterojunction is induced by polarization, which is different from the common strain-mediated magnetoelectric effect. The polarization-induced magnetoelectric effect of heterojunction is explained by the analyses of orbital-resolved density of states and spin densities, finding that the interfaces between Fe3Ga and HfO(2 )play an important role in magnetoelectric coupling, offering an alternative pathway for generating magnetoelectric coupling at room temperature.

引用

页数：4

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