Schottky barrier height and contact resistivity reduction of metal/GaOx/n-GaN structure

被引：0
|
作者：
Koba, Jiro [1 ]
Koike, Junichi [1 ]
机构：
[1] Tohoku Univ, Dept Mat Sci, Sendai, Miyagi 9808572, Japan
来源：
2023 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, IITC AND IEEE MATERIALS FOR ADVANCED METALLIZATION CONFERENCE, MAM, IITC/MAM | 2023年
关键词：
GaN; ss-Ga2O3; MIS contact; MIGS; specific contact resistivity;
D O I：
10.1109/IITC/MAM57687.2023.10154793
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
The purpose of this paper is to obtain the low contact resistivity on n-GaN. We adopted metal-insulator-semiconductor (MIS) contact for relaxing Fermi level pinning. Especially, in the case of thermally grown GaOx for insulator and Mg30nm/Al 220nm for metal, we obtained the contact resistivity as small as 3.7x10(-7) Omega center dot cm(2) on n-GaN having Si doping concentration of 2 x 10(18) cm(-3). The low contact resistivity was made possible by lowering the Schottky barrier height by the presence of the thin GaOx insulator at metal/n-GaN interface.
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页数：3
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