Theoretical Prediction of Thermoelectric Performance for Layered LaAgOX (X = S, Se) Materials in Consideration of the Four-Phonon and Multiple Carrier Scattering Processes

Inspired by the experimental achievement of layered LaCuOX (X = S, Se) with superior thermoelectric (TE) performance, the TE properties of Ag-based isomorphic LaAgOX are systemically investigated by the first-principles calculation. The LaAgOS and LaAgOSe are direct semiconductors with wide bandgaps of approximate to 2.50 and approximate to 2.35 eV. Essential four-phonon and multiple carrier scattering mechanisms are considered in phonon and electronic transport calculations to improve the accuracy of the figure-of-merit (ZT). The p-type LaAgOX (X = S, Se) shows excellent TE performance on account of the large Seebeck coefficient originated from the band convergency and low thermal conductivity caused by the strong phonon-phonon scattering. Consequently, the optimal ZTs along the out-of-plane direction decrease in the order of n-type LaAgOSe (approximate to 2.88) > p-type LaAgOSe (approximate to 2.50) > p-type LaAgOS (approximate to 2.42) > n-type LaAgOS (approximate to 2.27) at 700 K, and the optimal ZTs of approximate to 1.16 and approximate to 1.29 are achieved for p-type LaAgOS and LaAgOSe at the same temperature. The present work would provide a deep insight into the phonon and electronic transport properties of LaAgOX (X = S, Se), but also could shed light on the way for the rational design of state-of-the-art heteroanionic materials for TE application.