Using 3D position sensitivity to reveal response non-uniformities in CdZnTe, TlBr, and CsPbBr3 detectors

被引:1
作者
Bolonikov, A. E. [1 ]
Brown, C. A. [2 ]
Carini, G. A. [1 ]
Christian, J. [2 ]
Cirignano, L. [2 ]
Deane, C. R. [1 ]
Dellapenna, A. [1 ]
Deptuch, G. [1 ]
Fried, J. [1 ]
Herrmann, S. [1 ]
Kargar, A. [2 ]
Kim, H. [2 ]
Koslowsky, M. R. [3 ]
Maj, P. [1 ]
Manthena, S. V. [1 ]
Miller, A. L. [3 ]
Miryala, S. [1 ]
Norris, A. M. [3 ]
Ogorodnik, Y. [2 ]
Pinaroli, G. [1 ]
Raguzin, E. [1 ]
Smith, M. B. [3 ]
Squillante, M. R. [2 ]
Squillante, M. S. [2 ]
Tower, J. [2 ]
Valente, A. J. [3 ]
Weststrate, E. [2 ]
Shah, K. S. [2 ]
机构
[1] Brookhaven Natl Lab, Upton, NY 11793 USA
[2] Radiat Monitoring Devices, Watertown, MA 02472 USA
[3] Bubble Technol Ind, Chalk River, ON K0J 1J0, Canada
关键词
Room temperature semiconductor gamma-ray; detectors; CdZnTe; TlBr; CsPbBr3; High granularity detectors; Crystal defects; Position-sensitive virtual Frisch-grid detectors;
D O I
10.1016/j.nima.2023.168785
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Position sensitivity enables the correction of response non-uniformities in room-temperature semiconductor detectors caused by crystal defects and other factors. It can also be used to pinpoint the exact location of crystal defects responsible for the response variations. This work describes a technique for revealing and visualizing the detector regions affecting the charge collection efficiency in CdZnTe (CZT), TlBr, and CsPbBr3 detectors configured as position-sensitive virtual Frisch-grid (VFG) devices. The technique correlates the photopeak events in energy spectra with their spatial distributions inside the detectors using the position information. By selecting the events from narrow energy intervals within a photopeak, we can visualize the detector volumes with particular charge collection efficiencies, which, in turn, correlate with the locations of electrode and crystal defects. We demonstrate this technique in several examples. Columnar structures in the volume plots (position distribution maps) are consistent with signal losses near or at the anode in selected samples of CZT and TlBr. Structures exhibiting a distinct depth dependence are consistent with grain boundaries or other crystal defects.
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页数:9
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