Magneto-electric coupling beyond van der Waals interaction in two-dimensional multiferroic heterostructures

被引:3
作者
Jin, Chao [1 ]
Liu, Chang [1 ]
Ren, Fengzhu [1 ]
Wang, Bing [1 ]
Jia, Minglei [1 ]
Gu, Qinfen [2 ]
机构
[1] Henan Univ, Joint Ctr Theoret Phys JCTP, Sch Phys & Elect, Inst Computat Mat Sci,Int Joint Res Lab New Energy, Kaifeng 475004, Peoples R China
[2] ANSTO, Australian Synchrotron, 800 Blackburn Rd, Clayton, Vic 3168, Australia
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
TOTAL-ENERGY CALCULATIONS; FERROELECTRIC POLARIZATION; MAGNETISM; FERROMAGNETISM; PREDICTION; MONOLAYERS; ANISOTROPY; METALS; GROWTH; GAS;
D O I
10.1063/5.0180680
中图分类号
O59 [应用物理学];
学科分类号
摘要
Exploring two-dimensional (2D) multiferroic systems with strong magneto-electric coupling properties holds significant application value in nanoscale spintronics devices. However, due to the weak interlayer van der Waals interactions, strong magneto-electric coupling in 2D heterostructures is relatively rare. By using first-principles simulations, we demonstrate that in the NiPS3/Sc2CO2 heterostructure, the ferroelectric polarization switching of the Sc2CO2 layer induces a transition in the magnetic ground state of the NiPS3 layer from the ferromagnetic state to antiferromagnetic ordering, accompanied by a transformation from a semiconductor to a half-metallic state. This magnetic phase transition is caused by a novel magneto-electric coupling mechanism: the polarization switching changes the band alignment between the two materials and then induces a significant interlayer charge transfer, leading to the emergence of Stoner itinerant ferromagnetism. In addition, the polarization switching can also change the magnetic anisotropy from an easy magnetization plane to an easy magnetization axis. These results not only offer a promising multiferroic heterostructure for nonvolatile memory devices and magnetic sensors but also provide a feasible approach for designing multiferroic system with strong magneto-electric coupling.
引用
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页数:7
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