Multi-band optical resonance of all-dielectric metasurfaces toward high-performance ultraviolet sensing

被引:0
|
作者
Zheng, Jie [1 ]
Zhang, Cheng [1 ]
Li, Hong [1 ]
Liu, Xianchao [2 ]
Huang, Yijia [1 ]
Zhu, Jianqi [1 ]
Yang, Zhilin [3 ]
Li, Ling [1 ]
机构
[1] Sichuan Normal Univ, Coll Phys & Elect Engn, Lab Micronano Opt, Chengdu 610101, Peoples R China
[2] Southwest Inst Tech Phys, Chengdu, Peoples R China
[3] Xiamen Univ, Jiujiang Res Inst, Dept Phys, Collaborat Innovat Ctr Optoelect Semiconductor, Xiamen, Peoples R China
基金
中国国家自然科学基金;
关键词
FANO RESONANCES; RAMAN-SCATTERING; ENHANCED RAMAN;
D O I
10.1039/d3cp02634e
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
All-dielectric sensors featuring low-loss resonances have been proposed instead of plasmonic-based sensors. However, reported dielectric-based sensors generally work in the visible and near-infrared regions and detect the intensity variation of resonant modes because the electromagnetic energy is mainly confined inside dielectric nanoparticles. It is a challenge to adjust the hotspots from the inside to the surface of the all-dielectric metasurface. In this study, highly uniform Si3N4 all-dielectric metasurfaces have been successfully fabricated as sensing platforms by utilizing nanosphere self-assembly and plasma enhanced chemical vapor deposition techniques. Experimental and simulated results demonstrate that proposed Si3N4 all-dielectric metasurfaces exhibit multiple optical resonant modes in the ultraviolet and visible wavelength and present distinct field-confinement in the gaps of nanoparticles. The hotspots have been successfully adjusted to the surface of Si3N4 nanoparticles. Delightedly, Si3N4 all-dielectric metasurfaces show characteristic wavelength shifts with variation of the refractive index, and the sensitivity can reach 707 nm per RIU for trace detection as sensing substrates. Proposed Si3N4 all-dielectric metasurfaces are promising to act as high-sensitive sensing substrates in the ultraviolet and visible wavelength with the ease of high-throughput fabrication.
引用
收藏
页码:20026 / 20031
页数:6
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