Spin Injection in Trilayer Structures by Application of the Electric and Magnetic Fields

被引：1

作者：

Naseri, M. Shahri ^{[1
]}

机构：

[1] Payame Noor Univ PNU, Dept Phys, Tehran 193954697, Iran

来源：

SPIN | 2023年 / 13卷 / 01期

关键词：

Spin injection efficiency; interaction approximation; drift-diffusion approach; magnetic field; electric field; spin dependent conductance; GIANT MAGNETORESISTANCE; FERROMAGNETIC METAL; POLARIZED TRANSPORT; ELECTRONICS; PRECESSION; DIFFUSION; MODEL; DRAG;

D O I：

10.1142/S201032472350008X

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The spin injection efficiency in the Ferromagnetic/Nonmagnetic Semiconductor/Ferromagnetic (FM/NMS/FM) structures was studied under external magnetic and electric fields. It is found that spin injection efficiency can be strongly influenced by magnetic and electric fields. With the increase of these fields, the down-stream spin diffusion length increases and makes the spin injection efficiency increase. Furthermore, the effects of many-body correlations and exchange reduces the value of the diffusion constant that leads to enhance spin injection efficiency.

引用

页数：6

共 36 条

[1] GIANT MAGNETORESISTANCE OF (001)FE/(001) CR MAGNETIC SUPERLATTICES [J].

BAIBICH, MN ;

BROTO, JM ;

FERT, A ;

VANDAU, FN ;

PETROFF, F ;

EITENNE, P ;

CREUZET, G ;

FRIEDERICH, A ;

CHAZELAS, J .

PHYSICAL REVIEW LETTERS, 1988, 61 (21) :2472-2475

[2] ENHANCED MAGNETORESISTANCE IN LAYERED MAGNETIC-STRUCTURES WITH ANTIFERROMAGNETIC INTERLAYER EXCHANGE [J].

BINASCH, G ;

GRUNBERG, P ;

SAURENBACH, F ;

ZINN, W .

PHYSICAL REVIEW B, 1989, 39 (07) :4828-4830

[3] Gate-induced spin precession in an In0.53Ga0.47As two dimensional electron gas [J].

Bournel, A ;

Dollfus, P ;

Bruno, P ;

Hesto, P .

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 1998, 4 (01) :1-4

[4] Theoretical and experimental considerations on the spin field effect transistor [J].

Bournel, A ;

Delmouly, V ;

Dollfus, P ;

Tremblay, G ;

Hesto, P .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2001, 10 (1-3) :86-90

[5] Modelling of gate-induced spin precession in a striped channel high electron mobility transistor [J].

Bournel, A ;

Dollfus, P ;

Galdin, S ;

Musalem, FX ;

Hesto, P .

SOLID STATE COMMUNICATIONS, 1997, 104 (02) :85-89

[6]

Bournel A., 1999, MATER SCI FORUM, V205, P297

[7] The emergence of spin electronics in data storage [J].

Chappert, Claude ;

Fert, Albert ;

Van Dau, Frederic Nguyen .

NATURE MATERIALS, 2007, 6 (11) :813-823

[8] Spin injection and electric-field effect in degenerate semiconductors [J].

D'Amico, I .

PHYSICAL REVIEW B, 2004, 69 (16) :165305-1

[9] Spin Coulomb drag in the two-dimensional electron liquid [J].

D'Amico, I ;

Vignale, G .

PHYSICAL REVIEW B, 2003, 68 (04)

[10] Coulomb interaction effects in spin-polarized transport [J].

D'Amico, I ;

Vignale, G .

PHYSICAL REVIEW B, 2002, 65 (08) :1-12

← 1 2 3 4 →