Antioxidant performance and oxidation mechanism of a liquid silicon infiltration (LSI) SiC-Si coating at an ultra-high temperature of 1873 K

A novel SiC-Si coating with a high amount of net-like distributed Si was fabricated on the graphite substrate by liquid silicon infiltration (LSI) method to improve the oxidation-resistant performance. The mass gain of this LSI coating after 300 h oxidation at 1873 K was only 3.018%, suggesting an excellent static antioxidant property at 1873 K. The detailed oxidation mechanism of this LSI coating was explored in this work. It was found that the high amount of Si with the net-like distribution in this LSI coating promoted the passivation growth of SiO2 glass layer and prevented the SiO2 glass from crystallizing into cristobalite. In addition, the Si in this coating retarded the active oxidation and enhanced the coating stability. In contrast, the infiltration (VSI) SiC-Si coating presented an apparent mass loss, and the pack cementation (PC) SiC coating showed the catastrophic failure. The oxidation mechanisms of these two coatings were also discussed against the backdrop of the LSI coating with high antioxidant performance.