Gadolinium oxide single crystals: Optical properties and radiation resistance

被引:8
作者
Pustovarov, V. A. [1 ]
Nikolaev, R. E. [2 ]
Trifonov, V. A. [2 ]
Tarasenko, M. S. [2 ]
Dhoble, S. J. [3 ]
Tavrunov, D. A. [1 ]
Naumov, N. G. [2 ]
机构
[1] Ural Fed Univ, 19 Mira Str, Ekaterinburg 620002, Russia
[2] Russian Acad Sci, Inst Inorgan Chem, Siberian Branch, Novosibirsk 630090, Russia
[3] RTM Nagpur Univ, Dept Phys, Nagpur 440033, India
基金
俄罗斯科学基金会;
关键词
Tb3+ions; Photoluminescence; Intraconfigurational f-f transitions; Energy transfers; Radiation-induced defects; UP-CONVERSION; ENERGY-LEVELS; RE2O3; RE; GD2O3; LUMINESCENCE; NANOPARTICLES; GROWTH; ER3+; ULTRAVIOLET; MRI;
D O I
10.1016/j.optmat.2023.113966
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Large-size high optical quality Gd2O3 single crystals were grown from solution at T = 1145 degrees C by Czochralski method. XRD analysis showed that the crystal structure is characterized by a single cubic phase (C-phase). Absorption spectra and luminescence properties of Gd2O3 doped with impurity Tb3+ ion were studied. The absorption spectrum is determined by electronic transitions in Gd3+ ion (spectral region of 245-315 nm) and interband electron transitions below 240 nm. Intraconfigurational radiative f-f transitions from 5D4 level in Tb3+ ion are clearly manifested upon both UV-and X-ray excitation. At the same time, 6PJ & RARR; 8S7/2 radiative transitions in Gd3+ ions are completely absent. This fact indicates high efficiency of nonradiative energy transfer from Gd3+ to Tb3+ ions. Thermo-luminescent spectroscopy shows the absence of charge carrier trapping centers, which proves the perfection of its crystal structure. The crystal under study shows high radiation resistance to high-energy (E = 10 MeV, D = 105 kGy) electron beam. However, the effects of irradiation appear only in the photoluminescence excitation spectra and thermally stimulated luminescence.
引用
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页数:8
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