Electrolyte-gated synaptic transistors for brain-inspired computing

被引:12
|
作者
Ro, Jun-Seok [1 ]
An, Hye-Min [1 ]
Park, Hea-Lim [1 ]
机构
[1] Seoul Natl Univ Sci & Technol, Dept Mat Sci & Engn, Seoul 01811, South Korea
关键词
artificial synapse; neuromorphic electronics; electrolyte-gated synaptic transistor; neuromorphic computing; ORGANIC TRANSISTORS; PLASTICITY; VOLTAGE; DEVICES;
D O I
10.35848/1347-4065/acaca4
中图分类号
O59 [应用物理学];
学科分类号
摘要
The limitations of von Neumann computing systems in terms of information processing speed and energy consumption were overcome using neuromorphic devices. Among these devices, electrolyte-gated synaptic transistors (EGSTs) operated through the movement of ions in electrolytes are suitable devices for neuromorphic computing owing to their efficient energy consumption and biocompatibility. Herein, we explain the basic operating principle of EGSTs and then classify recent studies into four main characteristics: synaptic plasticity, fast switching speed, low energy consumption, and biocompatibility. Finally, we address additional requirements that should be satisfied and limitations that should be overcome for various and expanded applications of EGSTs.
引用
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页数:10
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