Memristive thermal switching in epitaxial V2O3 thin film

被引：0

作者：

Sahoo, Sophia ^{[1
]}

Kunwar, Hemant Singh ^{[1
]}

Yadav, Satish ^{[1
]}

Rawat, Rajeev ^{[1
]}

Sathe, Vasant ^{[1
]}

Phase, Deodatta Moreswar ^{[1
]}

Choudhary, Ram Janay ^{[1
]}

机构：

[1] UGC DAE Consortium Sci Res, Indore 452001, Madhya Pradesh, India

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2024年 / 970卷

关键词：

Strongly correlated system; Mott transition; Resistive switching; Mottronics; METAL-INSULATOR-TRANSITION; PHOTOEMISSION; ABSORPTION; XPS;

D O I：

10.1016/j.jallcom.2023.172620

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The phenomena of resistive switching (RS) or memristive devices is of great interest with the rise of emerging technologies and applications. It provides a remarkable approach to control the electronic phase of correlated electronic systems for the new generation Mottronic devices. Here, we have studied the RS properties of epitaxial V2O3 thin film grown on Al2O3 substrate at low temperature by recording the current biased voltage-current characteristics (I-V) within hysteretic phase co-existence region of the Mott transition. The temperature dependent Raman analysis reveal a structural phase transition accompanied with the Mott transition. Interestingly, our I-V characteristics demonstrate a clear thermally triggered insulator-to-metal transition (IMT). It is divulged that Joule heating is a dominating factor for triggering the electrically induced RS. Control of conductivity provides a pathway for adaptable electronics based on memristive concepts.

引用

页数：7

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