Mechanism of friction-induced chemical reaction high-efficient polishing single crystal 4H-SiC wafer using pure iron

被引：7
作者：
Wu, Min [1 ,2 ]
Huang, Hui [1 ,2 ,3 ]
Wu, Yueqin [1 ,2 ]
Xu, Zhiteng [1 ,2 ]
Li, Tukun [4 ]
Macleod, Iain [5 ]
Wu, Xiaolei [3 ,6 ]
机构：
[1] Huaqiao Univ, Natl & Local Joint Engn Res Ctr Intelligent Mfg Te, Xiamen 361021, Peoples R China
[2] Huaqiao Univ, Inst Mfg Engn, Xiamen 361021, Peoples R China
[3] State Key Lab High Performance Tools, Zhengzhou 450001, Peoples R China
[4] Univ Huddersfield, Ctr Precis Technol, Sch Comp & Engn, EPSRC Future Adv Metrol Hub, Huddersfield HD1 3DH, England
[5] IMA Ltd, 29 Clay Lane, Antrobus WA15 8PJ, Cheshire, England
[6] Zhengzhou Res Inst Abras & Grinding Co Ltd, Zhengzhou 450001, Peoples R China
来源：
TRIBOLOGY INTERNATIONAL | 2024年 / 193卷
基金：
中国国家自然科学基金;
关键词：
Friction-induced chemical reaction; SiC; Pure iron; Removal mechanism; SILICON-CARBIDE; TEMPERATURE; INTERFACE; NITRIDE;
D O I：
10.1016/j.triboint.2024.109450
中图分类号：
TH [机械、仪表工业];
学科分类号：
0802 ;
摘要：
This paper proposes a novel method for friction-induced chemical reaction machining of single-crystal 4H-SiC wafers using pure iron. Material Removal Rate (MRR) and surface quality of single-crystal 4H-SiC were studied, and the results demonstrate that both high surface quality and high MRR (Ra: 2.2 nm, MRR: 375 nm/min) were obtained. The mechanism of material removal during friction was investigated by examining the critical roles of friction speed. Solid -state chemical reactions between metal and SiC surfaces can be induced by friction, and the subsequent removal of reactants, resulting in a near-damage-free machined surface. A removal mechanism model of friction was established, which reveals that both the rates of solid -state reaction and reactant removal significantly impact the final removal rate of friction.
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页数：10
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共 41 条
  • [1] Chemical mechanical polishing of silicon carbide (SiC) based on coupling effect of ultrasonic vibration and catalysis
    Chen, Gaopan
    Pan, Liyan
    Luo, Haimei
    Zhou, Yan
    Luo, Guihai
    Pan, Guoshun
    [J]. JOURNAL OF ENVIRONMENTAL CHEMICAL ENGINEERING, 2023, 11 (05):
  • [2] Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face
    Chen, Gaopan
    Li, Jianguo
    Long, Jiangyou
    Luo, Haimei
    Zhou, Yan
    Xie, Xiaozhu
    Pan, Guoshun
    [J]. APPLIED SURFACE SCIENCE, 2021, 536
  • [3] A review and a fundamental theory of silicon nitride tribochemistry
    Dante, Roberto C.
    Kajdas, C. K.
    [J]. WEAR, 2012, 288 : 27 - 38
  • [4] Optimization of the plasma oxidation and abrasive polishing processes in plasma-assisted polishing for highly effective planarization of 4H-SiC
    Deng, H.
    Monna, K.
    Tabata, T.
    Endo, K.
    Yamamura, K.
    [J]. CIRP ANNALS-MANUFACTURING TECHNOLOGY, 2014, 63 (01) : 529 - 532
  • [5] Preparation and polishing properties of water-based magnetorheological chemical finishing fluid with high catalytic activity for single-crystal SiC
    Deng, Jiayun
    Lu, Jiabin
    Yan, Qiusheng
    Zhang, Qixiang
    Pan, Jisheng
    [J]. JOURNAL OF INTELLIGENT MATERIAL SYSTEMS AND STRUCTURES, 2021, 32 (13) : 1441 - 1451
  • [6] Deep insights into interaction behaviour and material removal of β-SiC wafer in nanoscale polishing
    Do, Tan-Tai
    Fang, Te-Hua
    [J]. TRIBOLOGY INTERNATIONAL, 2023, 186
  • [7] Novel polystyrene/CeO2-TiO2 multicomponent core/shell abrasives for high-efficiency and high-quality photocatalytic-assisted chemical mechanical polishing of reaction-bonded silicon carbide
    Gao, Bo
    Zhai, Wenjie
    Zhai, Quan
    Zhang, Mingzhuang
    [J]. APPLIED SURFACE SCIENCE, 2019, 484 : 534 - 541
  • [8] Shape modulation due to sub-surface damage difference on N-type 4H-SiC wafer during lapping and polishing
    Guo, Fenglin
    Shao, Chen
    Chen, Xiufang
    Xie, Xiejian
    Yang, Xianglong
    Hu, Xiaobo
    Xu, Xiangang
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 152
  • [9] The polishing properties of magnetorheological-elastomer polishing pad based on the heterogeneous Fenton reaction of single-crystal SiC
    Hu, Da
    Lu, Jiabin
    Deng, Jiayun
    Yan, Qiusheng
    Long, Haotian
    Luo, Yingrong
    [J]. PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY, 2023, 79 : 78 - 85
  • [10] Sliding behavior and wear mechanism of iron and cobalt-based high-temperature alloys against WC and SiC balls
    Huang, Changming
    Zou, Bin
    Guo, Peng
    Liu, Yanan
    Huang, Chuanzhen
    Wang, Jun
    [J]. INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS, 2016, 59 : 40 - 55
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