Growth behavior of intermetallic layers at the interface between Cu and eutectic Sn-Bi by grain boundary diffusion with the grain growth at solid-state temperatures

被引:15
作者
Minho, O. [1 ]
Tanaka, Yuki [1 ]
Kobayashi, Equo [1 ]
机构
[1] Tokyo Inst Technol, Dept Mat Sci & Engn, S8-18,2-12-1 Ookayama,Meguro Ku, Tokyo 1528552, Japan
关键词
Eutectic Sn-Bi; Solder; Intermetallic compound; Growth kinetics; Rate-controlling process; Lamella structure; TRANSIENT LIQUID-PHASE; ISOTHERMAL REACTIVE DIFFUSION; SOLDER; KINETICS; MICROSTRUCTURE; NI; EVOLUTION; CO;
D O I
10.1016/j.intermet.2023.107986
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The growth kinetics and rate-controlling processes of intermetallic layers formed in Cu/(Sn-58 wt% Bi) diffusion couples were investigated. Isothermal annealing of diffusion couples was conducted in the temperature range of 363-393 K for various times up to 384 h. In the diffusion couple, an intermetallic layer composed of Cu6Sn5 with irregular scallop shapes and Cu3Sn with relatively uniform thickness forms at the Cu/(Sn-Bi) interface. Isothermal sections of the equilibrium phase diagram in the ternary Bi-Cu-Sn system were calculated at the isothermal annealing temperatures and the peak temperature of the reflow process by a CALPHAD (calculation of phase diagrams) method. The diffusion path passes through the three-phase tie-triangle, including Cu6Sn5 and Cu3Sn. The obtained thicknesses were plotted against the annealing time, and a power function equation was found to describe their relationship. The values of the exponent in the power function were close to 0.25, indicating that the layer growth was predominantly controlled by boundary diffusion with the grain growth. Furthermore, the exponent values were relatively insensitive to the annealing temperature. The relationship between the exponent and the annealing temperature was analyzed, and it was concluded that the grain growth in the intermetallic layer followed a parabolic law. The growth and morphology evolution of the intermetallic compound and Sn-Bi eutectic microstructure at the interface were depicted, shedding light on the widening of the eutectic microstructure. Additionally, the activation enthalpy for the rate-controlling process of intermetallic layer growth at solid-state temperatures was evaluated using a least-squares method, providing insights into the energy barrier for the diffusion or transport of atoms across the interface. This study contributes to a better understanding of intermetallic layer formation and growth in Cu/(eutectic Sn-Bi) diffusion couples, offering valuable information for developing reliable solder joints and high-temperature solders.
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页数:10
相关论文
共 57 条
[1]   Precipitation and coarsening of bismuth plates in Sn-Ag-Cu-Bi and Sn-Cu-Ni-Bi solder joints [J].
Belyakov, S. A. ;
Xian, J. ;
Zeng, G. ;
Sweatman, K. ;
Nishimura, T. ;
Akaiwa, T. ;
Gourlay, C. M. .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (01) :378-390
[2]   Impurity diffusion of Hf and Zr in Gd-doped CeO2 [J].
Beschnitt, Stefan ;
De Souza, Roger A. .
SOLID STATE IONICS, 2017, 305 :23-29
[3]   A compact 2.0 T superconducting magnet [J].
Browning, R. .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2020, 91 (12)
[4]   GRAIN-BOUNDARY DIFFUSION AND GROWTH OF TITANIUM SILICIDE LAYERS ON SILICON [J].
CORCORAN, YL ;
KING, AH ;
DELANEROLLE, N ;
KIM, B .
JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (11) :1177-1183
[5]   Thermal analysis of the compositional shift in a transient liquid phase during sintering of a ternary Cu-Sn-Bi powder mixture [J].
D'Hondt, T ;
Corbin, SF .
METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 2006, 37A (01) :217-224
[6]  
Drapala J., 2018, Journal of Physics: Conference Series, V1134, DOI [10.1088/1742-6596/1134/1/012011, 10.1088/1742-6596/1134/1/012011]
[7]  
Drapala J., 2007, 16 INT METALLURGICAL
[8]   Low temperature Cu-Cu bonding by transient liquid phase sintering of mixed Cu nanoparticles and Sn-Bi eutectic powders [J].
Faiz, M. Khairi ;
Bansho, Kazuma ;
Suga, Tadatomo ;
Miyashita, Tomoyuki ;
Yoshida, Makoto .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2017, 28 (21) :16433-16443
[9]   Influence of Pad Surface Finish on the Microstructure Evolution and Intermetallic Compound Growth in Homogeneous Sn-Bi and Sn-Bi-Ag Solder Interconnects [J].
Fan, Yaohui ;
Wu, Yifan ;
Dale, Travis F. ;
Lakshminarayana, Sukshitha Achar Puttur ;
Greene, Colin, V ;
Badwe, Nilesh U. ;
Aspandiar, Raiyo F. ;
Blendell, John E. ;
Subbarayan, Ganesh ;
Handwerker, Carol A. .
JOURNAL OF ELECTRONIC MATERIALS, 2021, 50 (12) :6615-6628
[10]   Numerical analysis for kinetics of reactive diffusion controlled by boundary and volume diffusion in a hypothetical binary system [J].
Furuto, Akira ;
Kajihara, Masanori .
MATERIALS TRANSACTIONS, 2008, 49 (02) :294-303