One-step hydrothermal synthesis of high-performance stable Ni-doped 1T-MoS2 electrodes for supercapacitors

被引:25
|
作者
Wang, Zheng [1 ]
Wang, Jiawei [1 ]
Wang, Fumin [1 ]
Zhang, Xubin [1 ]
He, Xinyuan [1 ]
Liu, Shuai [1 ]
Zhang, Zhengliang [1 ]
Zhang, Zhiwei [1 ]
Wang, XingTao [1 ]
机构
[1] Tianjin Univ, Sch Chem Engn & Technol, Tianjin 300350, Peoples R China
基金
中国国家自然科学基金;
关键词
1T-MoS; 2; Elemental; -doped; Supercapacitor; DFT; In-situ Raman; MOS2; NANOSHEETS; ALKALINE; LITHIUM; STORAGE; METAL;
D O I
10.1016/j.jallcom.2023.169505
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Elemental-doped is considered as an effective strategy to modulate the electronic structure of Metallic MoS2 (i.e., 1T-MoS2) and enhance its electrochemical performance. Herein, DFT is applied to predict the electronic structure of different transition metals (TMs) doped 1T-MoS2. Based on the results, stable Nidoped 1T-MoS2 (N3MS) is synthesized in a propionic acid (PA) aided system. Electrochemical tests show that N3MS possesses an excellent specific capacitance of 2461.2 F center dot g-1 at 1 A center dot g-1 and a cycle retention rate of 85.67 % at 10 A center dot g-1 for 1000 cycles due to the critical contribution of Ni-doped to electronic structure modulation. Meanwhile, in-situ Raman measurements show that the active sites of N3MS are Mo3+ and Ni2+. The assembled N3MS//ZnO/ZnS-C hybrid device shows a specific capacitance of 242.28 F center dot g-1 at 1 A center dot g-1, an excellent energy density of 65.96 Wh center dot kg-1 at the power density of 700 W center dot kg-1 and the excellent stability for up to 2000 cycles (77.26 % retention at 5 A center dot g-1). This work proves the significant contribution of elemental doping to modulate electronic structures and improve electrochemical performance. (c) 2023 Elsevier B.V. All rights reserved.
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页数:11
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