Exceptional Light Sensitivity by Thiol-Ene Click Lithography

被引:42
|
作者
Wang, Qianqian [1 ]
Cui, Hao [1 ]
Wang, Xiaolin [1 ]
Hu, Ziyu [1 ]
Tao, Peipei [1 ]
Li, Mingyang [1 ]
Wang, Jianlong [1 ]
Tang, Yaping [1 ]
Xu, Hong [1 ]
He, Xiangming [1 ]
机构
[1] Tsinghua Univ, Inst Nucl & New Energy Technol, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
OPTICAL LITHOGRAPHY; CHEMISTRY; DESIGN; PHOTORESISTS; VERSATILE;
D O I
10.1021/jacs.2c11887
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Lithographic patterning, which utilizes the solubility switch of photoresists to convert optical signals into nanostructures on the substrate, is the primary top-down approach for nanoscale fabrication. However, the low light/electron-energy conversion efficiency severely limits the throughput of lithography. Thiol-ene reaction, as a photoinitiated radical addition reaction, is widely known as click reaction in the field of chemistry due to its extremely high efficiency. Here, we introduce a click lithography strategy utilizing the rapid thiol-ene click reaction to realize ultraefficient nanofabrication. This novel approach facilitated by the implementation of ultrahigh-functionality material designs enables high-contrast patterning of metal-containing nanoclusters under an extremely low deep-ultraviolet exposure dose, e.g., 7.5 mJ cm-2, which is 10-20 times lower than the dose used in the photoacid generator-based photoresist system. Meanwhile, 45 nm dense patterns were also achieved at a low dose using electron beam lithography, revealing the great potential of this approach in high-resolution patterning. Our results demonstrated the high-sensitivity and high-resolution features of click lithography, providing inspiration for future lithography design.
引用
收藏
页码:3064 / 3074
页数:11
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