Realization of multiple topological boundary states in phononic crystals

被引:7
作者
Cui, Zhenxing [1 ,2 ]
Peng, Mian [1 ,2 ]
Zhang, Xuewei [1 ,2 ]
Wei, Qiang [1 ,2 ]
Yan, Mou [3 ]
Chen, Gang [1 ,2 ,3 ]
机构
[1] Shanxi Univ, Inst Laser Spect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Peoples R China
[2] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China
[3] Zhengzhou Univ, Sch Phys & Microelect, Key Lab Mat Phys, Minist Educ, Zhengzhou 450001, Peoples R China
基金
国家重点研发计划; 中国国家自然科学基金;
关键词
INSULATOR;
D O I
10.1103/PhysRevB.107.165414
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Acoustic topological insulators that host the topological boundary states, which is insensitive to defects and disorder, have become an important research topic and provide completely new ways to manipulate acoustic waves. However, most of the acoustic topological boundary states generally appear in a single or two band gaps, hindering the applications in multiband acoustic devices. Compared to previous work, in this paper, we experimentally observe the acoustic multiple topological boundary states in four band gaps, including the end (corner) states in one-dimensional (two-dimensional) phononic crystals, based on the acoustic quartic-root topological insulators. These topological boundary states originate from two consecutive square-root procedures, which is similar to the square-root topological insulators. Our paper provides a brand-new approach to achieve the multiple boundary states by simply inserting additional cavities without elaborate designing the structure, which makes the manipulation of the acoustic more flexible.
引用
收藏
页数:10
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