Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

被引:0
|
作者
Liu, Yang [1 ]
Fu, Chen [1 ]
Jiang, Guangyuan [1 ]
Zhang, Guangyuan [1 ]
Yang, Guang [1 ]
Lv, Yuanjie [2 ]
Lin, Zhaojun [3 ]
机构
[1] Shandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
[2] Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit AS, Shijiazhuang 050051, Peoples R China
[3] Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250101, Peoples R China
关键词
ELECTRON-MOBILITY; GAS;
D O I
10.1063/5.0172695
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this study, the ungated AlGaN/GaN devices with special mesa structures were designed. The hypothesis of effective width expansion was tested experimentally by using ungated samples with different sizes, and an empirical expression for calculating the conduction channel effective width was given according to the experimental results. Finally, split-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths were prepared, and the channel electron mobility of split-gate samples was calculated by using the empirical expression and polarization Coulomb field (PCF) scattering theoretical model. The results showed that, for split-gate AlGaN/GaN HFETs, with the increase in the gate length, the total amount of additional polarization charges underneath the gate increases, resulting in the enhancement of the PCF scattering intensity.
引用
收藏
页数:8
相关论文
共 50 条
  • [41] Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
    吕元杰
    冯志红
    林兆军
    郭红雨
    顾国栋
    尹甲运
    王元刚
    徐鹏
    宋旭波
    蔡树军
    Chinese Physics B, 2014, 23 (07) : 653 - 656
  • [42] SPLIT-GATE FIELD-EFFECT TRANSISTOR
    SHUR, M
    APPLIED PHYSICS LETTERS, 1989, 54 (02) : 162 - 164
  • [43] Evaluation of a Gate-First Process for AlGaN/GaN Heterostructure Field-Effect Transistors
    Li, Liuan
    Kishi, Akinori
    Shiraishi, Takayuki
    Jiang, Ying
    Wang, Qingpeng
    Ao, Jin-Ping
    Ohno, Yasuo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (11)
  • [44] Piezoelectric effects in AlGaN/GaN heterostructure field-effect transistors
    Yu, ET
    Asbeck, PM
    Lau, SS
    Sullivan, GJ
    PROCEEDINGS OF THE SYMPOSIUM ON LIGHT EMITTING DEVICES FOR OPTOELECTRONIC APPLICATIONS AND THE TWENTY-EIGHTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS, 1998, 98 (02): : 468 - 478
  • [45] GaN/AlGaN heterostructure devices: Photodetectors and field-effect transistors
    Shur, MS
    Khan, MA
    MRS BULLETIN, 1997, 22 (02) : 44 - 50
  • [46] Effect of special gate metals on polarization Coulomb field scattering in AlGaN/GaN high electron mobility transistors
    Gao, Zhiliang
    Cheng, Qianding
    Han, Yanhui
    Yang, Ming
    Yuan, Yafei
    Wang, Ruojue
    He, Jihao
    Yan, Feng
    Tang, Xu
    Zhang, Weihong
    Hu, Zijun
    Mu, Jingguo
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2025, 131 (03):
  • [47] AlGaN/GaN doped channel heterostructure field effect transistors
    Shur, Michael S.
    Khan, M.Asif
    Physica Scripta T, 1997, T69 : 103 - 107
  • [48] APPLICATION OF SPLIT-GATE AND DUAL-GATE FIELD-EFFECT TRANSISTOR DESIGNS TO INAS FIELD-EFFECT TRANSISTORS
    LONGENBACH, KF
    BERESFORD, R
    WANG, WI
    SOLID-STATE ELECTRONICS, 1990, 33 (09) : 1211 - 1213
  • [49] AlGaN/GaN doped channel heterostructure field effect transistors
    Shur, MS
    Khan, MA
    PHYSICA SCRIPTA, 1997, T69 : 103 - 107
  • [50] High-power AlGaN/InGaN/AlGaN/GaN recessed gate heterostructure field-effect transistors
    Fareed, RSQ
    Hu, X
    Tarakji, A
    Deng, J
    Gaska, R
    Shur, M
    Khan, MA
    APPLIED PHYSICS LETTERS, 2005, 86 (14) : 1 - 3