Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors
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作者:
Liu, Yang
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Shandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R ChinaShandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
Liu, Yang
[1
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Fu, Chen
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Shandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R ChinaShandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
Fu, Chen
[1
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Jiang, Guangyuan
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Shandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R ChinaShandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
Jiang, Guangyuan
[1
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Zhang, Guangyuan
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Shandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R ChinaShandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
Zhang, Guangyuan
[1
]
Yang, Guang
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Shandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R ChinaShandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
Yang, Guang
[1
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Lv, Yuanjie
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit AS, Shijiazhuang 050051, Peoples R ChinaShandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
Lv, Yuanjie
[2
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Lin, Zhaojun
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Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250101, Peoples R ChinaShandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
Lin, Zhaojun
[3
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机构:
[1] Shandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
[2] Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit AS, Shijiazhuang 050051, Peoples R China
[3] Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250101, Peoples R China
In this study, the ungated AlGaN/GaN devices with special mesa structures were designed. The hypothesis of effective width expansion was tested experimentally by using ungated samples with different sizes, and an empirical expression for calculating the conduction channel effective width was given according to the experimental results. Finally, split-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths were prepared, and the channel electron mobility of split-gate samples was calculated by using the empirical expression and polarization Coulomb field (PCF) scattering theoretical model. The results showed that, for split-gate AlGaN/GaN HFETs, with the increase in the gate length, the total amount of additional polarization charges underneath the gate increases, resulting in the enhancement of the PCF scattering intensity.
机构:
National Key Laboratory of Application Specific Integrated Circuit(ASIC),Hebei Semiconductor Research InstituteSchool of Physics, Shandong University
吕元杰
冯志红
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National Key Laboratory of Application Specific Integrated Circuit(ASIC),Hebei Semiconductor Research InstituteSchool of Physics, Shandong University
机构:
Slovak Univ Technol Bratislava, Dept Microelect, SK-81219 Bratislava, SlovakiaSlovak Univ Technol Bratislava, Dept Microelect, SK-81219 Bratislava, Slovakia
Kordos, P.
Kudela, P.
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机构:Slovak Univ Technol Bratislava, Dept Microelect, SK-81219 Bratislava, Slovakia
Kudela, P.
Gregusova, D.
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机构:Slovak Univ Technol Bratislava, Dept Microelect, SK-81219 Bratislava, Slovakia
Gregusova, D.
Donoval, D.
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机构:Slovak Univ Technol Bratislava, Dept Microelect, SK-81219 Bratislava, Slovakia
机构:
Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Lu Yuan-Jie
Feng Zhi-Hong
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Feng Zhi-Hong
Lin Zhao-Jun
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机构:
Shandong Univ, Sch Phys, Jinan 250100, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Lin Zhao-Jun
Guo Hong-Yu
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Guo Hong-Yu
Gu Guo-Dong
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Gu Guo-Dong
Yin Jia-Yun
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Yin Jia-Yun
Wang Yuan-Gang
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Wang Yuan-Gang
Xu Peng
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Xu Peng
Song Xu-Bo
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Song Xu-Bo
Cai Shu-Jun
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China