Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors
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Liu, Yang
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Shandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R ChinaShandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
Liu, Yang
[1
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Fu, Chen
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Shandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R ChinaShandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
Fu, Chen
[1
]
Jiang, Guangyuan
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Shandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R ChinaShandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
Jiang, Guangyuan
[1
]
Zhang, Guangyuan
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Shandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R ChinaShandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
Zhang, Guangyuan
[1
]
Yang, Guang
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Shandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R ChinaShandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
Yang, Guang
[1
]
Lv, Yuanjie
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit AS, Shijiazhuang 050051, Peoples R ChinaShandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
Lv, Yuanjie
[2
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Lin, Zhaojun
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Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250101, Peoples R ChinaShandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
Lin, Zhaojun
[3
]
机构:
[1] Shandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
[2] Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit AS, Shijiazhuang 050051, Peoples R China
[3] Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250101, Peoples R China
In this study, the ungated AlGaN/GaN devices with special mesa structures were designed. The hypothesis of effective width expansion was tested experimentally by using ungated samples with different sizes, and an empirical expression for calculating the conduction channel effective width was given according to the experimental results. Finally, split-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths were prepared, and the channel electron mobility of split-gate samples was calculated by using the empirical expression and polarization Coulomb field (PCF) scattering theoretical model. The results showed that, for split-gate AlGaN/GaN HFETs, with the increase in the gate length, the total amount of additional polarization charges underneath the gate increases, resulting in the enhancement of the PCF scattering intensity.
机构:
Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Lv Yuan-Jie
Feng Zhi-Hong
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Feng Zhi-Hong
Gu Guo-Dong
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Gu Guo-Dong
Yin Jia-Yun
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Yin Jia-Yun
Fang Yu-Long
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Fang Yu-Long
Wang Yuan-Gang
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Wang Yuan-Gang
Tan Xin
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Tan Xin
Zhou Xing-Ye
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Zhou Xing-Ye
Lin Zhao-Jun
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Shandong Univ, Sch Phys, Jinan 250100, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Lin Zhao-Jun
Ji Zi-Wu
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Shandong Univ, Sch Phys, Jinan 250100, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Ji Zi-Wu
Cai Shu-Jun
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
机构:
National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research InstituteNational Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute
吕元杰
冯志红
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National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research InstituteNational Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute
冯志红
顾国栋
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National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research InstituteNational Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute
顾国栋
尹甲运
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National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research InstituteNational Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute
尹甲运
房玉龙
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National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research InstituteNational Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute
房玉龙
王元刚
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National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research InstituteNational Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute
王元刚
谭鑫
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National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research InstituteNational Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute
谭鑫
周幸叶
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National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research InstituteNational Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute
周幸叶
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林兆军
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冀子武
蔡树军
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机构:
National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research InstituteNational Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute
机构:
Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Lv, Yuanjie
Feng, Zhihong
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Feng, Zhihong
Lin, Zhaojun
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机构:
Shandong Univ, Sch Phys, Jinan 250100, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Lin, Zhaojun
Ji, Ziwu
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Shandong Univ, Sch Phys, Jinan 250100, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Ji, Ziwu
Zhao, Jingtao
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Shandong Univ, Sch Phys, Jinan 250100, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Zhao, Jingtao
Gu, Guodong
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Gu, Guodong
Han, Tingting
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Han, Tingting
Yin, Jiayun
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Yin, Jiayun
Liu, Bo
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China
Liu, Bo
Cai, Shujun
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R ChinaHebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Peoples R China