Investigation on the Bandgap-Adjustable (Ga1-x In x )2O3 Film Prepared by Magnetron Sputtering

With the continuous development of Ga2O3 ultrawide bandgap material and devices, the demand for Ga2O3-based heterostructure has been increasing in recent years. (Ga1-xInx)(2)O-3 alloy, which boasts an adjustable bandgap, offers greater flexibility in the creation of optoelectronic and microelectronic devices. This paper presents a thorough analysis of (Ga1-xInx)(2)O-3 films fabricated using magnetron cosputtering with Ga2O3 and In2O3 targets. By modifying the sputtering power of the In2O3 target, (Ga1-xInx)(2)O-3 films with the In content ranging from 0 to 0.81 can be produced, which can provide an adjustable bandgap within 4.94-3.42 eV. Meanwhile, the influences of the O-2/Ar ratio and annealing temperature on the (Ga1-xInx)(2)O-3 films are analyzed, and a high O-2/Ar ratio can enhance the flatness of the film by reducing the oxygen vacancy and increasing its density; a high annealing temperature can improve the crystallization quality of (Ga1-xInx)(2)O-3 films.