Improving the Dispersion Stability and Chemical Mechanical Polishing Performance of CeO2 Slurries

被引:13
作者
Ye, Wang [1 ,2 ]
Zhang, Baoguo [1 ,2 ]
Wu, Pengfei [1 ,2 ]
Min, Liu [1 ,2 ]
Cui, Dexing [1 ,2 ]
Xian, Wenhao [1 ,2 ]
机构
[1] Hebei Univ Technol, Sch Elect & Informat Engn, Tianjin 300130, Peoples R China
[2] Tianjin Key Lab Elect Mat & Devices, Tianjin 300130, Peoples R China
关键词
SURFACE-CHEMISTRY; AGGLOMERATION; PLANARIZATION; ADDITIVES;
D O I
10.1149/2162-8777/accaa5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The dispersion stability of CeO2 suspensions limits their widespread use in IC manufacturing because unstable slurries can be very damaging to the chemical mechanical polishing (CMP) flattening process. Therefore, this study is based on the use of wet ball milling in synergy with chemical agents to improve the dispersion stability of CeO2 slurry. Different organic acids were used as adjusting agents, including acetic acid, propionic acid, lactic acid, and phytic acid. The characterization of the dispersion stability showed that, compared to other organic acids, the CeO2 suspensions using acetic acid as a modest particle size distribution, good stability (zeta potential > 50 mV), monodispersity (polydispersity index < 0.1) and higher chemical activity (higher content of Ce3+). Moreover, CMP experiments showed that the CeO2 slurry using acetic acid as the adjusting agent had a higher removal rate (4139 angstrom min(-1)). (c) 2023 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.
引用
收藏
页数:8
相关论文
共 26 条
[1]   FROM BULK CEO2 TO SUPPORTED CERIUM OXYGEN CLUSTERS - A DIFFUSE REFLECTANCE APPROACH [J].
BENSALEM, A ;
MULLER, JC ;
BOZONVERDURAZ, F .
JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS, 1992, 88 (01) :153-154
[2]   Effects of CMP slurry additives on the agglomeration of alumina nanoparticles 1: General aggregation rate behavior [J].
Brahma, Neil ;
Talbot, Jan B. .
JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2014, 419 :56-60
[3]   Preparation of Surface Modified Ceria Nanoparticles as Abrasives for the Application of Chemical Mechanical Polishing (CMP) [J].
Cheng, Jie ;
Huang, Shuo ;
Lu, Xinchun .
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2020, 9 (02)
[4]  
Clogston JD, 2011, METHODS MOL BIOL, V697, P63, DOI 10.1007/978-1-60327-198-1_6
[5]   CHEMICAL PROCESSES IN GLASS POLISHING [J].
COOK, LM .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1990, 120 (1-3) :152-171
[6]   Role of Different Additives on Silicon Dioxide Film Removal Rate during Chemical Mechanical Polishing Using Ceria-Based Dispersions [J].
Dandu, P. R. Veera ;
Peethala, B. C. ;
Babu, S. V. .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (09) :II869-II874
[7]   Quantification of shear induced agglomeration in chemical mechanical polishing slurries under different chemical environments [J].
Khanna, Aniruddh J. ;
Gupta, Sushant ;
Kumar, Purushottam ;
Chang, Feng-Chi ;
Singh, Rajiv K. .
MICROELECTRONIC ENGINEERING, 2019, 210 :1-7
[8]   Study of Agglomeration Behavior of Chemical Mechanical Polishing Slurry under Controlled Shear Environments [J].
Khanna, Aniruddh J. ;
Gupta, Sushant ;
Kumar, Purushottam ;
Chang, Feng-Chi ;
Singh, Rajiv K. .
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2018, 7 (05) :P238-P242
[9]   Method for Determining Stability of CMP Slurry [J].
Khanna, Aniruddh J. ;
Gupta, Sushant ;
Kumar, Purushottam ;
Chang, Feng-Chi ;
Singh, Rajiv K. .
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2018, 7 (08) :P423-P428
[10]   Chemical Mechanical Planarization: Slurry Chemistry, Materials, and Mechanisms [J].
Krishnan, Mahadevaiyer ;
Nalaskowski, Jakub W. ;
Cook, Lee M. .
CHEMICAL REVIEWS, 2010, 110 (01) :178-204