Evidence of frustrated magnetic interactions in a Wigner-Mott insulator

被引:33
作者
Tang, Yanhao [1 ,2 ]
Su, Kaixiang [3 ]
Li, Lizhong [1 ]
Xu, Yang [1 ]
Liu, Song [4 ]
Watanabe, Kenji [5 ]
Taniguchi, Takashi [5 ]
Hone, James [4 ]
Jian, Chao-Ming [6 ]
Xu, Cenke [3 ]
Mak, Kin Fai [1 ,6 ,7 ]
Shan, Jie [1 ,6 ,7 ]
机构
[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
[2] Zhejiang Univ, Interdisciplinary Ctr Quantum Informat, Dept Phys, Zhejiang Prov Key Lab Quantum Technol, Hangzhou, Peoples R China
[3] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA USA
[4] Columbia Univ, Dept Mech Engn, New York, NY USA
[5] Natl Inst Mat Sci, Tsukuba, Japan
[6] Cornell Univ, Lab Atom & Solid State Phys, Ithaca, NY 14853 USA
[7] Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA
基金
中国国家自然科学基金; 美国国家科学基金会;
关键词
MOLECULAR-DYNAMICS; ATP SYNTHASE; DNA; TRANSITION; TRANSPORT; PHYSICS; STATES; IONS; SPIN;
D O I
10.1038/s41565-022-01309-8
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Electrons in two-dimensional semiconductor moire materials are more delocalized around the lattice sites than those in conventional solids(1,2). The non-local contributions to the magnetic interactions can therefore be as important as the Anderson superexchange(3), which makes the materials a unique platform to study the effects of competing magnetic interactions(3,4). Here we report evidence of strongly frustrated magnetic interactions in a Wigner-Mott insulator at a two-thirds (2/3) filling of the moire lattice in angle-aligned WSe2/WS2 bilayers. Magneto-optical measurements show that the net exchange interaction is antiferromagnetic for filling factors below 1 with a strong suppression at a 2/3 filling. The suppression is lifted on screening of the long-range Coulomb interactions and melting of the Wigner-Mott insulators by a nearby metallic gate. The results can be qualitatively captured by a honeycomb-lattice spin model with an antiferromagnetic nearest-neighbour coupling and a ferromagnetic second-neighbour coupling. Our study establishes semiconductor moire materials as a model system for lattice-spin physics and frustrated magnetism(5).
引用
收藏
页码:233 / +
页数:17
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