Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

被引：3

作者：

Sui, Jin ^{[1
,2
,3
]}

Chen, Jiaxiang ^{[1
,2
,3
]}

Qu, Haolan ^{[1
,2
,3
]}

Zhang, Yu ^{[1
,2
,3
]}

Lu, Xing ^{[4
]}

Zou, Xinbo ^{[1
]}

机构：

[1] ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[3] Univ Chinese Acad Sci, Sch Microelect, Beijing 100049, Peoples R China

[4] Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2024年 / 45卷 / 03期

基金：

上海市自然科学基金; 中国国家自然科学基金;

关键词：

GaN; deep level transient spectroscopy; minority carrier trap; time constant; trap concentration; KINETICS; DIODES;

D O I：

10.1088/1674-4926/45/3/032503

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Emission and capture characteristics of a deep hole trap (H1) in n-GaN Schottky barrier diodes (SBDs) have been investigated by optical deep level transient spectroscopy (ODLTS). Activation energy (E emi) and capture cross-section (sigma p) of H1 are determined to be 0.75 eV and 4.67 x 10-15 cm2, respectively. Distribution of apparent trap concentration in space charge region is demonstrated. Temperature-enhanced emission process is revealed by decrease of emission time constant. Electric-field-boosted trap emission kinetics are analyzed by the Poole-Frenkel emission (PFE) model. In addition, H1 shows point defect capture properties and temperature-enhanced capture kinetics. Taking both hole capture and emission processes into account during laser beam incidence, H1 features a trap concentration of 2.67 x 1015 cm-3. The method and obtained results may facilitate understanding of minority carrier trap properties in wide bandgap semiconductor material and can be applied for device reliability assessment.

引用

页数：6

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