Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

被引：3
作者：
Sui, Jin [1 ,2 ,3 ]
Chen, Jiaxiang [1 ,2 ,3 ]
Qu, Haolan [1 ,2 ,3 ]
Zhang, Yu [1 ,2 ,3 ]
Lu, Xing [4 ]
Zou, Xinbo [1 ]
机构：
[1] ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
[3] Univ Chinese Acad Sci, Sch Microelect, Beijing 100049, Peoples R China
[4] Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2024年 / 45卷 / 03期
基金：
上海市自然科学基金; 中国国家自然科学基金;
关键词：
GaN; deep level transient spectroscopy; minority carrier trap; time constant; trap concentration; KINETICS; DIODES;
D O I：
10.1088/1674-4926/45/3/032503
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Emission and capture characteristics of a deep hole trap (H1) in n-GaN Schottky barrier diodes (SBDs) have been investigated by optical deep level transient spectroscopy (ODLTS). Activation energy (E emi) and capture cross-section (sigma p) of H1 are determined to be 0.75 eV and 4.67 x 10-15 cm2, respectively. Distribution of apparent trap concentration in space charge region is demonstrated. Temperature-enhanced emission process is revealed by decrease of emission time constant. Electric-field-boosted trap emission kinetics are analyzed by the Poole-Frenkel emission (PFE) model. In addition, H1 shows point defect capture properties and temperature-enhanced capture kinetics. Taking both hole capture and emission processes into account during laser beam incidence, H1 features a trap concentration of 2.67 x 1015 cm-3. The method and obtained results may facilitate understanding of minority carrier trap properties in wide bandgap semiconductor material and can be applied for device reliability assessment.
引用
收藏
页数：6
相关论文
共 50 条
[21]   Deep levels in AlGaN/GaN HEMTs on silicon substrate are characterized by current deep level transient spectroscopy [J].
Mosbahi, H. ;
Gassoumi, M. ;
Gaquiere, C. ;
Zaidi, M. A. ;
Maaref, H. .
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2010, 4 (11) :1783-1785
[22]   GaN surface sputter damage investigated using deep level transient spectroscopy [J].
Tang, Xiaoyan ;
Hammersley, Simon ;
Markevich, Vladimir ;
Hawkins, Ian ;
Crowe, Iain ;
Martin, Trevor ;
Peaker, Tony ;
Halsall, Matthew .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 126
[23]   Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure [J].
Zhu, Qing ;
Ma, Xiao-Hua ;
Chen, Wei-Wei ;
Hou, Bin ;
Zhu, Jie-Jie ;
Zhang, Meng ;
Chen, Li-Xiang ;
Cao, Yan-Rong ;
Hao, Yue .
CHINESE PHYSICS B, 2016, 25 (06)
[24]   Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers [J].
Fang, Z-Q ;
Claflin, B. ;
Look, D. C. ;
Green, D. S. ;
Vetury, R. .
JOURNAL OF APPLIED PHYSICS, 2010, 108 (06)
[25]   Simulation of deep level transient spectroscopy using circuit simulator with deep level trap model implemented by Verilog-A language [J].
Fukuda, Koichi ;
Hattori, Junichi ;
Asai, Hidehiro ;
Shimizu, Mitsuaki ;
Hashizume, Tamotsu .
2019 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2019), 2019, :133-136
[26]   Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy [J].
Chen, Jiaxiang ;
Huang, Wei ;
Qu, Haolan ;
Zhang, Yu ;
Zhou, Jianjun ;
Chen, Baile ;
Zou, Xinbo .
APPLIED PHYSICS LETTERS, 2022, 120 (21)
[27]   Deep defects in n-type high-purity germanium: quantification of optical variants of deep level transient spectroscopy [J].
Blondeel, A ;
Clauws, P .
PHYSICA B-CONDENSED MATTER, 1999, 273-4 :584-588
[28]   Deep level investigation by capacitance and conductance transient spectroscopy in AlGaN/GaN/SiC HEMTs [J].
Gassoumi, M. ;
Grimbert, B. ;
Poisson, M. A. ;
Fontaine, J. ;
Zaidi, M. A. ;
Gaquiere, C. ;
Maaref, H. .
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2009, 11 (11) :1713-1717
[29]   Electronic properties and deep traps in electron-irradiated n-GaN [J].
V. N. Brudnyi ;
S. S. Verevkin ;
A. V. Govorkov ;
V. S. Ermakov ;
N. G. Kolin ;
A. V. Korulin ;
A. Ya. Polyakov ;
N. B. Smirnov .
Semiconductors, 2012, 46 :433-439
[30]   Study of substrate induced deep level defects in bulk GaN layers grown by molecular beam epitaxy using deep level transient spectroscopy [J].
Ajaz-un-Nabi, M. ;
Arshad, M. Imran ;
Ali, A. ;
Asghar, M. ;
Hasan, M. -A. .
MANUFACTURING SCIENCE AND TECHNOLOGY, PTS 1-3, 2011, 295-297 :777-+
12345