Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

被引：2
|
作者：
Sui, Jin [1 ,2 ,3 ]
Chen, Jiaxiang [1 ,2 ,3 ]
Qu, Haolan [1 ,2 ,3 ]
Zhang, Yu [1 ,2 ,3 ]
Lu, Xing [4 ]
Zou, Xinbo [1 ]
机构：
[1] ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
[3] Univ Chinese Acad Sci, Sch Microelect, Beijing 100049, Peoples R China
[4] Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2024年 / 45卷 / 03期
基金：
中国国家自然科学基金; 上海市自然科学基金;
关键词：
GaN; deep level transient spectroscopy; minority carrier trap; time constant; trap concentration; KINETICS; DIODES;
D O I：
10.1088/1674-4926/45/3/032503
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Emission and capture characteristics of a deep hole trap (H1) in n-GaN Schottky barrier diodes (SBDs) have been investigated by optical deep level transient spectroscopy (ODLTS). Activation energy (E emi) and capture cross-section (sigma p) of H1 are determined to be 0.75 eV and 4.67 x 10-15 cm2, respectively. Distribution of apparent trap concentration in space charge region is demonstrated. Temperature-enhanced emission process is revealed by decrease of emission time constant. Electric-field-boosted trap emission kinetics are analyzed by the Poole-Frenkel emission (PFE) model. In addition, H1 shows point defect capture properties and temperature-enhanced capture kinetics. Taking both hole capture and emission processes into account during laser beam incidence, H1 features a trap concentration of 2.67 x 1015 cm-3. The method and obtained results may facilitate understanding of minority carrier trap properties in wide bandgap semiconductor material and can be applied for device reliability assessment.
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页数：6
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