Electrical Activity and Extremes of Individual Suspended ZnO Nanowires for 3D Nanoelectronic Applications

We explored the electrical activity and extremes inside individual suspended zinc oxide (ZnO) nanowires (NWs) (diameter: 50-550 nm, length: 5-50 mu m) subjected to high forward bias-induced Joule heating using two-terminal current-voltage measurements. NWs were isolated using a reproducible nanometrology technique, employing a nanomanipulator inside a scanning electron microscope. Schottky behavior is observed between installed tips and ZnO NW. The suspended ZnO NWs exhibited an average electrical resistivity rho (approximately 2.3 x 10(-2) Omega cm) and a high electron density n (exceeding 1.89 x 10(18) cm(-3)), comparable to that of InP NWs, GaN NWs, and InAs NWs (10(18)similar to 10(19) cm(-3)), suggesting the potential to drive advancements in high-performance NW devices. A maximum breakdown current density (J(BD)) of similar to 0.14 MA/cm(2) and a maximum breakdown power density (P-BD) of 6.93 mW/mu m(3) were obtained, both of which are higher than substrate-bound ZnO NWs and consistent with previously reported results obtained from probed ZnO NWs grown vertically on the substrate. Moreover, we discovered that NWs experienced thermal breakdown due to Joule heating and exploited this breakdown mechanism to further investigate the temperature distribution along the ZnO NWs, as well as its dependence on the electrical properties and thermal conductance of contact electrodes. Thermal conductance was determined to be similar to 0.4 nW K-1 and similar to 1.66 pW K-1 at the tungsten(W)-ZnO NW and platinum(Pt)-ZnO NW contacts, respectively. In addition, we measured the elastic modulus (130-171 GPa), which closely approximated bulk values. We also estimated the nanoindentation hardness to be between 5 and 10 GPa. This work provides valuable insights into the electrical activity and extreme mechanisms, thus providing a better understanding of the potentials and limitations associated with utilizing suspended NWs in 3D nanodevices.