Electronic structure, elastic and transport properties of new Palladium-based Half-Heusler materials for thermoelectric applications

被引:11
作者
Rani, Bindu [1 ]
Khandy, Shakeel Ahmad [2 ]
Singh, Jaspal [3 ]
Verma, Ajay Singh [4 ]
Ali, Atif Mossad [5 ]
Dhiman, Shobhna [1 ]
Kaur, Kulwinder [6 ]
机构
[1] Punjab Engn Coll Deemed Univ, Dept Appl Sci, Chandigarh 160012, India
[2] Zhejiang Univ, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Sch Micronano Elect, Hangzhou 311200, Peoples R China
[3] Mata Sundri Univ, Dept Phys, Girls Coll, Mansa 151505, PB, India
[4] Uttaranchal Univ, Sch Appl & Life Sci, Div Res & Innovat, Dehra Dun 248007, India
[5] King Khalid Univ, Fac Sci, Dept Phys, Abha 61413, Saudi Arabia
[6] Mehr Chand Mahajan Coll Women, Dept Phys, Chandigarh 160036, India
来源
MATERIALS TODAY COMMUNICATIONS | 2023年 / 36卷
关键词
Density functional theory; Figure of merit; Half Heusler materials; Thermoelectricity; HIGH-TEMPERATURE; COMPOUND; PERFORMANCE;
D O I
10.1016/j.mtcomm.2023.106461
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electronic structure with reference to bandgap energies play a significant role in deciding the dimensionless figure of merit (ZT), which in turn is used to identify the thermoelectric performance of a material. Slater Pauling arrangement of valence electrons and band orientations along k-space decide the effective mass of electrons/ holes in the corresponding band valleys of PdMX (M= Sc, Y, and X = P, As, Sb) semiconductors. A detailed picture of the electronic structure and transport properties is rigorously established in this report. Calculations of elastic constant, phonon dispersion and formation (cohesive) energy reveal that these alloys are mechanically, dynamically, and chemically stable materials. Substantially, low lattice thermal conductivity is observed in the range 4.57 W/mK for PdScAs and 11.51 W/mK for PdYSb alloy. The relaxation time and effective mass are calculated with Deformation potential theory. The maximum calculated ZT value for PdScP, PdScAs, PdScSb, PdYP, PdYAs and PdYSb are 0.28, 0.33, 0.19, 0.43, 0.44 and 0.27 respectively.
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页数:10
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共 71 条
  • [1] Topological electronic structure in half-Heusler topological insulators
    Al-Sawai, W.
    Lin, Hsin
    Markiewicz, R. S.
    Wray, L. A.
    Xia, Y.
    Xu, S. -Y.
    Hasan, M. Z.
    Bansil, A.
    [J]. PHYSICAL REVIEW B, 2010, 82 (12):
  • [2] Structural, electronic, mechanical and magnetic properties of Mn based ferromagnetic half Heusler alloys: A first principles study
    Amudhavalli, A.
    Rajeswarapalanichamy, R.
    Iyakutti, K.
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 708 : 1216 - 1233
  • [3] First-principles study of electronic structure and thermoelectric properties of p-type XIrSb(X = Ti, Zr and Hf) half-Heusler compounds
    Bamgbose, Muyiwa K.
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 129
  • [4] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS
    BARDEEN, J
    SHOCKLEY, W
    [J]. PHYSICAL REVIEW, 1950, 80 (01): : 72 - 80
  • [5] Born M, 1940, P CAMB PHILOS SOC, V36, P454
  • [6] Half-Heusler compounds: novel materials for energy and spintronic applications
    Casper, F.
    Graf, T.
    Chadov, S.
    Balke, B.
    Felser, C.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (06)
  • [7] Computational Search for Better Thermoelectric Performance in Nickel-Based Half-Heusler Compounds
    Chen, Xiaorui
    Zhang, Xin
    Gao, Jianzhi
    Li, Qing
    Shao, Zhibin
    Lin, Haiping
    Pan, Minghu
    [J]. ACS OMEGA, 2021, 6 (28): : 18269 - 18280
  • [8] Thermoelectric Performance of the Half-Heusler Phases RNiSb (R = Sc, Dy, Er, Tm, Lu): High Mobility Ratio between Majority and Minority Charge Carriers
    Ciesielski, K.
    Synoradzki, K.
    Veremchuk, I
    Skokowski, P.
    Szymanski, D.
    Grin, Yu
    Kaczorowski, D.
    [J]. PHYSICAL REVIEW APPLIED, 2020, 14 (05):
  • [9] An extensive investigation of structural, electronic, thermoelectric and optical properties of bi-based half-Huesler alloys by first principles calculations
    Dey, Aditya
    Sharma, Ramesh
    Dar, Sajad Ahmad
    [J]. MATERIALS TODAY COMMUNICATIONS, 2020, 25
  • [10] A new defective 19-electron TiPtSb half-Heusler thermoelectric compound with heavy band and low lattice thermal conductivity
    Fang, T.
    Xia, K.
    Nan, P.
    Ge, B.
    Zhao, X.
    Zhu, T.
    [J]. MATERIALS TODAY PHYSICS, 2020, 13