Effect of Si+ Ion Implantation in α-Ga2O3 Films on Their Gas Sensitivity

被引：6

作者：

Yakovlev, Nikita ^{[1
,2
]}

Almaev, Aleksei ^{[1
,2
]}

Butenko, Pavel ^{[3
,4
]}

Tetelbaum, David ^{[5
]}

Mikhaylov, Alexey ^{[5
]}

Nikolskaya, Alena ^{[5
]}

Pechnikov, Aleksei ^{[3
,4
]}

Stepanov, Sergey ^{[3
,4
]}

Boiko, Mikhail ^{[3
,4
]}

Chikiryaka, Andrei ^{[3
,4
]}

Nikolaev, Vladimir ^{[3
,4
]}

机构：

[1] Fokon LLC, Kaluga 248035, Russia

[2] Natl Res Tomsk State Univ, Res & Dev Ctr Adv Technol Microelect, Tomsk 634050, Russia

[3] Perfect Crystals LLC, St Petersburg 194064, Russia

[4] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia

[5] Lobachevsky Univ, Res Inst Phys & Technol, Nizhnii Novgorod 603022, Russia

来源：

IEEE SENSORS JOURNAL | 2023年 / 23卷 / 03期

基金：

俄罗斯基础研究基金会; 俄罗斯科学基金会;

关键词：

alpha-Ga2O3; gas sensitivity; halide vapor phase epitaxy (HVPE); ion implantation; TUNGSTEN-OXIDE FILMS; THIN-FILM; SNO2; SENSORS; CONDUCTIVITY; NANOWIRES; BEHAVIOR;

D O I：

10.1109/JSEN.2022.3229707

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of the Si+ ion implantation on the gas-sensing properties of single-crystal (0001) alpha-Ga2O3 films grownby halide vapor phaseepitaxy (HVPE) hasbeen studied. It is established that irradiation with a dose of 8 x 10(12) - 8 x 10(15) cm(-2) at an energy of 100 keV followed by postimplantation annealing increases the response of alpha-Ga2O3 films to 3 vol% of H-2 by 43 times at 400 degrees C, reduces the response time by a factor of 6, and expands the operating temperature range down to 30 degrees C. In addition, alpha-Ga2O3 layers irradiated with a Si+ ion dose of 8 x 10(13) - 8 x 10(15) cm(-2) demonstrate high sensitivity to CO and NH3 gases. The mechanism of Si+ ion irradiationeffecton the gas-sensingpropertiesof alpha-Ga2O3 structures is proposed.

引用

页码：1885 / 1895

页数：11

共 52 条

[41] Conductance Model for Single-Crystalline/Compact Metal Oxide Gas-Sensing Layers in the Nondegenerate Limit: Example of Epitaxial SnO2(101) [J].

Simion, Cristian Eugen ;

Schipani, Federico ;

Papadogianni, Alexandra ;

Stanoiu, Adelina ;

Budde, Melanie ;

Oprea, Alexandru ;

Weimar, Udo ;

Bierwagen, Oliver ;

Barsan, Nicolae .

ACS SENSORS, 2019, 4 (09) :2420-2428

[42] Review-Theory and Characterization of Doping and Defects in β-Ga2O3 [J].

Tadjer, Marko J. ;

Lyons, John L. ;

Nepal, Neeraj ;

Freitas, Jaime A., Jr. ;

Koehler, Andrew D. ;

Foster, Geoffrey M. .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2019, 8 (07) :Q3187-Q3194

[43] Ion-beam modification of metastable gallium oxide polymorphs [J].

Tetelbaum, David ;

Nikolskaya, Alena ;

Korolev, Dmitry ;

Mullagaliev, Timur ;

Belov, Alexey ;

Trushin, Vladimir ;

Dudin, Yuri ;

Nezhdanov, Alexey ;

Mashin, Aleksandr ;

Mikhaylov, Alexey ;

Pechnikov, Alexey ;

Scheglov, Michael ;

Nikolaev, Vladimir ;

Gogova, Daniela .

MATERIALS LETTERS, 2021, 302

[44]

Uchida T, 2018, MRS ADV, V3, P171, DOI 10.1557/adv.2018.45

[45]

Vasiliev R. B., 2004, RUSSIAN CHEM REV, V73, P939, DOI [10.1070/RC2004v073n10ABEH000921, DOI 10.1070/RC2004V073N10ABEH000921]

[46] Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping [J].

Villora, Encarnacion G. ;

Shimamura, Kiyoshi ;

Yoshikawa, Yukio ;

Ujiie, Takekazu ;

Aoki, Kazuo .

APPLIED PHYSICS LETTERS, 2008, 92 (20)

[47] Ga2O3(Sn) Oxides for High-Temperature Gas Sensors [J].

Vorobyeva, Nataliya ;

Rumyantseva, Marina ;

Platonov, Vadim ;

Filatova, Darya ;

Chizhov, Artem ;

Marikutsa, Artem ;

Bozhev, Ivan ;

Gaskov, Alexander .

NANOMATERIALS, 2021, 11 (11)

[48] Effect of Si+ ion irradiation of α-Ga2O3 epitaxial layers on their hydrogen sensitivity [J].

Yakovlev, N. N. ;

Almaev, A. V. ;

Butenko, P. N. ;

Mikhaylov, A. N. ;

Pechnikov, A. I. ;

Stepanov, S. I. ;

Timashov, R. B. ;

Chikiryaka, A. V. ;

Nikolaev, V. I. .

MATERIALS PHYSICS AND MECHANICS, 2022, 48 (03) :301-307

[49] Effect of density and thickness on H2-gas sensing property of sputtered SnO2 films [J].

Yamazaki, T ;

Okumura, H ;

Jin, CJ ;

Nakayama, A ;

Kikuta, T ;

Nakatani, N .

VACUUM, 2005, 77 (03) :237-243

[50] Recent progress of Ga2O3-based gas sensors [J].

Zhai, Hongchao ;

Wu, Zhengyuan ;

Fang, Zhilai .

CERAMICS INTERNATIONAL, 2022, 48 (17) :24213-24233

← 1 2 3 4 5 6 →