Effect of Si+ Ion Implantation in α-Ga2O3 Films on Their Gas Sensitivity

被引:6
作者
Yakovlev, Nikita [1 ,2 ]
Almaev, Aleksei [1 ,2 ]
Butenko, Pavel [3 ,4 ]
Tetelbaum, David [5 ]
Mikhaylov, Alexey [5 ]
Nikolskaya, Alena [5 ]
Pechnikov, Aleksei [3 ,4 ]
Stepanov, Sergey [3 ,4 ]
Boiko, Mikhail [3 ,4 ]
Chikiryaka, Andrei [3 ,4 ]
Nikolaev, Vladimir [3 ,4 ]
机构
[1] Fokon LLC, Kaluga 248035, Russia
[2] Natl Res Tomsk State Univ, Res & Dev Ctr Adv Technol Microelect, Tomsk 634050, Russia
[3] Perfect Crystals LLC, St Petersburg 194064, Russia
[4] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia
[5] Lobachevsky Univ, Res Inst Phys & Technol, Nizhnii Novgorod 603022, Russia
基金
俄罗斯基础研究基金会; 俄罗斯科学基金会;
关键词
alpha-Ga2O3; gas sensitivity; halide vapor phase epitaxy (HVPE); ion implantation; TUNGSTEN-OXIDE FILMS; THIN-FILM; SNO2; SENSORS; CONDUCTIVITY; NANOWIRES; BEHAVIOR;
D O I
10.1109/JSEN.2022.3229707
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effect of the Si+ ion implantation on the gas-sensing properties of single-crystal (0001) alpha-Ga2O3 films grownby halide vapor phaseepitaxy (HVPE) hasbeen studied. It is established that irradiation with a dose of 8 x 10(12) - 8 x 10(15) cm(-2) at an energy of 100 keV followed by postimplantation annealing increases the response of alpha-Ga2O3 films to 3 vol% of H-2 by 43 times at 400 degrees C, reduces the response time by a factor of 6, and expands the operating temperature range down to 30 degrees C. In addition, alpha-Ga2O3 layers irradiated with a Si+ ion dose of 8 x 10(13) - 8 x 10(15) cm(-2) demonstrate high sensitivity to CO and NH3 gases. The mechanism of Si+ ion irradiationeffecton the gas-sensingpropertiesof alpha-Ga2O3 structures is proposed.
引用
收藏
页码:1885 / 1895
页数:11
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